상세정보
학술지
Structural Evolution and Carrier Scattering of Si Nanowires as a Function of Oxidation Time
- 저자
- 배정민, 이우정, 마진원, 김정훈, 오승훈, 조만호, 강철, 정승훈, 박재훈
- 발행일
- 201503
- 출처
- Journal of Materials Chemistry C : Materials for Optical and Electronic Devices, v.3 no.9, pp.2123-2131
- ISSN
- 2050-7526
- 출판사
- Royal Society of Chemistry (RSC)
- 초록
- We investigated the morphological characteristics of the cross-sectional shape of Si-core nanowires (NWs) as a function of oxidation time. In the case of as-grown Si NWs, the Si cores were hexagons with a 3-fold symmetry, not a 6-fold symmetry, and this shape was transformed into a triangular shape with rounded edges after thermal oxidation. Structural changes in the cross-section of the Si-core NWs were related to the surface free energy. Moreover, the morphological change in the oxide shell during the oxidation treatment suggested that the stress relaxation process is closely related to the structural evolution of the Si core. The change in defect states generated in Si/SiO2 core/shell NWs during structural evolution was investigated by low-temperature photoluminescence and optical pump-THz probe spectroscopy measurements. In particular, surface defect states formed in the interfacial region between the Si core and the oxide shell were reduced during the oxidation process. Appropriate control of the surface state affected carrier scattering: the relaxation time of photogenerated carriers was significantly increased due to the reduction in surface defects.
- KSP 제안 키워드
- As-grown, Low temperature(LT), Low-temperature photoluminescence, Morphological Characteristics, Oxidation process, Oxidation treatment, Photogenerated carriers, Relaxation process, Relaxation time, Si nanowires, Stress Relaxation