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학술지 Temperature-Dependent Resonance Energy Transfer from Semiconductor Quantum Wells to Graphene
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저자
유영준, 김근수, 남정태, 권세라, 변혜령, 이관재, 류재현, Russell D. Dupuis, 김점오, 안광현, 류순민, 류미이, 김진수
발행일
201501
출처
Nano Letters, v.15 no.2, pp.896-902
ISSN
1530-6984
출판사
American Chemical Society(ACS)
DOI
https://dx.doi.org/10.1021/nl503624j
초록
Resonance energy transfer (RET) has been employed for interpreting the energy interaction of graphene combined with semiconductor materials such as nanoparticles and quantum-well (QW) heterostructures. Especially, for the application of graphene as a transparent electrode for semiconductor light emitting diodes, the mechanism of exciton recombination processes such as RET in graphene-semiconductor QW heterojunctions should be understood clearly. Here, we characterized the temperature-dependent RET behaviors in graphene/semiconductor QW heterostructures. We then observed the tuning of the RET efficiency from 5% to 30% in graphene/QW heterostructures with 60 nm dipole-dipole coupled distance at temperatures of 300 to 10 K. This survey allows us to identify the roles of localized and free excitons in the RET process from the QWs to graphene as a function of temperature.
키워드
free exciton, graphene, localized exciton, Resonance energy transfer, semiconductor quantum well, temperature dependence
KSP 제안 키워드
Free exciton, Quantum Well(QW), Recombination processes, Resonance energy transfer, Semiconductor materials, Semiconductor quantum wells, Temperature-dependent, exciton recombination, light-emitting diode(LED), localized exciton, temperature dependence