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Journal Article Temperature-Dependent Resonance Energy Transfer from Semiconductor Quantum Wells to Graphene
Cited 13 time in scopus Share share facebook twitter linkedin kakaostory
Authors
Young-Jun Yu, Keun Soo Kim, Jungtae Nam, Se Ra Kwon, Hyeryoung Byun, Kwanjae Lee, Jae-Hyun Ryou, Russell D. Dupuis, Jeomoh Kim, Gwanghyun Ahn, Sunmin Ryu, Mee-Yi Ryu, Jin Soo Kim
Issue Date
2015-01
Citation
Nano Letters, v.15, no.2, pp.896-902
ISSN
1530-6984
Publisher
American Chemical Society(ACS)
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1021/nl503624j
Abstract
Resonance energy transfer (RET) has been employed for interpreting the energy interaction of graphene combined with semiconductor materials such as nanoparticles and quantum-well (QW) heterostructures. Especially, for the application of graphene as a transparent electrode for semiconductor light emitting diodes, the mechanism of exciton recombination processes such as RET in graphene-semiconductor QW heterojunctions should be understood clearly. Here, we characterized the temperature-dependent RET behaviors in graphene/semiconductor QW heterostructures. We then observed the tuning of the RET efficiency from 5% to 30% in graphene/QW heterostructures with 60 nm dipole-dipole coupled distance at temperatures of 300 to 10 K. This survey allows us to identify the roles of localized and free excitons in the RET process from the QWs to graphene as a function of temperature.
KSP Keywords
Free excitons, Quantum Well(QW), Recombination processes, Resonance energy transfer, Semiconductor materials, Semiconductor quantum wells, Temperature-dependent, exciton recombination, light-emitting diode(LED), transparent electrode