Journal Article
Thickness Modulation Effects of Al2O3 Capping Layers on Device Performance for the Top-Gate Thin-Film Transistors Using Solution-Processed Poly(4-Vinyl Phenol)/Zn-Sn-O Gate Stacks
Cited 1 time in
Download 0 time
Share
Authors
Kyeong-Ah Kim, Jun-Yong Bak, Sung-Min Yoon, Seong Jip Kim, Sunho Jeong, Youngmin Choi, Soon-Won Jung
Issue Date
2015-05
Citation
Journal of Vacuum Science and Technology B, v.33, no.3, pp.1-7
14MB1400, The core technology development of light and space adaptable energy-saving I/O (Input/Output) platform for future advertising service,
Hwang Chi-Sun
Abstract
Solution-processed Zn-Sn-O (ZTO) top-gate thin-film transistors with Al2O3/poly(4-vinyl phenol) (PVP) double-layered gate insulators (GI) were fabricated and characterized. ZTO active channel was formed by spin-coating method and activated at a temperature as low as 350 °C. The chemical damages for the PVP films, which were induced during the photolithography-based patterning process were effectively suppressed by the introduction of Al2O3 capping layer. This capping layer also played an important role in improving the drain current hysteretic behaviors caused by intrinsic properties of the PVP film by modulating the capacitance coupling in the double-layered GI. The carrier mobility, subthreshold swing, and on/off ratio were obtained as approximately 5.13 cm2V-1s-1, 0.36 V/dec, 7.03 × 106, respectively, with hysteresis-free characteristics when the thickness values of Al2O3 capping and PVP GI layers were designed to be 90 and 220 nm, respectively.
The materials provided on this website are subject to copyrights owned by ETRI and protected by the Copyright Act. Any reproduction, modification, or distribution, in whole or in part, requires the prior explicit approval of ETRI. However, under Article 24.2 of the Copyright Act, the materials may be freely used provided the user complies with the following terms:
The materials to be used must have attached a Korea Open Government License (KOGL) Type 4 symbol, which is similar to CC-BY-NC-ND (Creative Commons Attribution Non-Commercial No Derivatives License). Users are free to use the materials only for non-commercial purposes, provided that original works are properly cited and that no alterations, modifications, or changes to such works is made. This website may contain materials for which ETRI does not hold full copyright or for which ETRI shares copyright in conjunction with other third parties. Without explicit permission, any use of such materials without KOGL indication is strictly prohibited and will constitute an infringement of the copyright of ETRI or of the relevant copyright holders.
J. Kim et. al, "Trends in Lightweight Kernel for Many core Based High-Performance Computing", Electronics and Telecommunications Trends. Vol. 32, No. 4, 2017, KOGL Type 4: Source Indication + Commercial Use Prohibition + Change Prohibition
J. Sim et.al, “the Fourth Industrial Revolution and ICT – IDX Strategy for leading the Fourth Industrial Revolution”, ETRI Insight, 2017, KOGL Type 4: Source Indication + Commercial Use Prohibition + Change Prohibition
If you have any questions or concerns about these terms of use, or if you would like to request permission to use any material on this website, please feel free to contact us
KOGL Type 4:(Source Indication + Commercial Use Prohibition+Change Prohibition)
Contact ETRI, Research Information Service Section
Privacy Policy
ETRI KSP Privacy Policy
ETRI does not collect personal information from external users who access our Knowledge Sharing Platform (KSP). Unathorized automated collection of researcher information from our platform without ETRI's consent is strictly prohibited.
[Researcher Information Disclosure] ETRI publicly shares specific researcher information related to research outcomes, including the researcher's name, department, work email, and work phone number.
※ ETRI does not share employee photographs with external users without the explicit consent of the researcher. If a researcher provides consent, their photograph may be displayed on the KSP.