상세정보
학술지
A new technique to extract channel mobility in submicron MOSFETs using inversion charge slope obtained from measured S-parameters
- 저자
- Seonghearn Lee, 유현규
- 발행일
- 200104
- 출처
- IEEE Transactions on Electron Devices, v.48 no.4, pp.784-788
- ISSN
- 0018-9383
- 출판사
- IEEE
- 협약과제
- 01MM3200, 1-5GHz 대역 직접 변환 다중밴드 통합 칩 기술개발, 유현규
- 초록
- We present a novel method to extract the effective channel mobility directly from measured S-parameters in submicron MOSFETs. This method is based on the slope extraction of the total gate charge versus mask gate length from measured S-parameters. Unlike conventional approaches, the use of a very long channel test device or the extraction of the parasitic capacitance and effective channel length are not required to extract the mobility in short-channel LDD devices, thus making the new method more accurate and simpler. The validity of the method is demonstrated by comparing the result with those using a previously reported method.
- KSP 제안 키워드
- Effective Channel Length, Gate charge, Inversion charge, Long channel, Parasitic Capacitance, Short channel, Test device, effective channel mobility, gate length, new method, novel method