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A new technique to extract channel mobility in submicron MOSFETs using inversion charge slope obtained from measured S-parameters
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- Authors
- Seonghearn Lee, Hyun Kyu Yu
- Issue Date
- 2001-04
- Citation
- IEEE Transactions on Electron Devices, v.48, no.4, pp.784-788
- ISSN
- 0018-9383
- Publisher
- IEEE
- Language
- English
- Type
- Journal Article
- Abstract
- We present a novel method to extract the effective channel mobility directly from measured S-parameters in submicron MOSFETs. This method is based on the slope extraction of the total gate charge versus mask gate length from measured S-parameters. Unlike conventional approaches, the use of a very long channel test device or the extraction of the parasitic capacitance and effective channel length are not required to extract the mobility in short-channel LDD devices, thus making the new method more accurate and simpler. The validity of the method is demonstrated by comparing the result with those using a previously reported method.
- KSP Keywords
- Effective Channel Length, Gate charge, Inversion charge, Long channel, Parasitic Capacitance, Short channel, Test device, effective channel mobility, gate length, new method, novel method