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Optical characteristics of silicon semiconductor bridges under high current density conditions
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- Authors
- Jongdae Kim, Tae Moon Roh, Kyoung-Ik Cho, Kenneth C. Jungling
- Issue Date
- 2001-05
- Citation
- IEEE Transactions on Electron Devices, v.48, no.5, pp.852-857
- ISSN
- 0018-9383
- Publisher
- IEEE
- Language
- English
- Type
- Journal Article
- Abstract
- The optical emission spectra (180-700 nm) of plasma produced by a semiconductor bridge (SCB) with aluminum or tungsten electrodes have been measured and analyzed. The spatially and temporally resolved emission spectra of the SCB device have provided insights into the dynamic discharge of the bridge. The plasma electron temperature of the SCB device was measured using the comparison of the continuum emission of the bridge with the calculated optical emission spectra for a gray body source. Measured electron temperatures in the plasma produced by the bridges are related to the capacitor discharging voltage. The best estimates indicate that 4100-5500째K was measured for Al-electrode SCB device and 5650-6000째K for W-electrode SCB device.
- KSP Keywords
- Continuum emission, Discharging voltage, Electron temperature, High Current Density, Optical characteristics, Semiconductor bridge(SCB), Silicon semiconductor, Tungsten electrodes, optical emission spectra