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Conference Paper Deep trench guard technology to suppress coupling between inductors in silicon RF ICs
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Authors
Cheon Soo Kim, Piljae Park, Joung-Woo Park, Nam Hwang, Hyun Kyu Yu
Issue Date
2001-05
Citation
International Microwave Symposium (IMS) 2001, pp.1873-1876
Language
English
Type
Conference Paper
DOI
https://dx.doi.org/10.1109/MWSYM.2001.967273
Abstract
Trench guard technology was proposed to suppress the coupling between inductors, and to reduce crosstalk in silicon RF ICs. The test structure adopting a deep trench guard ring showed a coupling less than -40 dB in the frequency range of 0.5-20 GHz, and negligible change in designed inductance value up to 10 GHz. Furthermore, it can be also used to isolate a noisy circuit block from other quiet blocks in mixed signal silicon RF ICs.