BROWSE
Detail
Conference Paper
Effects of O/sub 2//C/sub 2/F/sub 6/ plasma descum with RF cleaning on via formation in MCM-D substrate using photosensitive BCB
Cited - time in 
Share 
Share
- Authors
- Chul-Won Ju, Seong-Su Park, Seong-Jin Kim, Kyu-Ha Pack, Hee-Tae Lee, Min-Kyu Song
- Issue Date
- 2001-05
- Citation
- Electronic Components and Technology Conference (ECTC) 2001, pp.1-3
- Publisher
- IEEE
- Language
- English
- Type
- Conference Paper
- Abstract
- In this paper, we present the effect of plasma descum by O2/C2F6 gas mixture on the via formation of photosensitive BCB layer and compare it with that of RF cleaning. Test vehicle was fabricated on Si wafer with Cu/photosensitive BCB layer structure and ECR-CVD system was used to descum the via. Residues at via bottom after the descum process were investigated by AES (auger electron microscope) and SEM (scanning electron microscope). It is shown in this work that O2/C2F6 plasma etching and the RF cleaning are effective for organic C, native C respectively, therefore the via descum by a combination of plasma etching with O2/C2F6 gas mixture and RF cleaning can efficiently remove the via residues.
- KSP Keywords
- Auger electron, Computer simulation(MC and MD), ECR-CVD, Gas mixture, Layer structure, Plasma Etching, Si wafer, scanning electron microscope, via formation