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Journal Article Nitrogen Doping Effect in Ag-SbTe Solid Electrolyte for Programmable Metallization Cell Memory
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Authors
Young-Sam Park, Seung-Yun Lee, Moongyu Jang, Sung-Min Yoon
Issue Date
2012-05
Citation
Electronics Letters, v.48, no.8, pp.458-460
ISSN
0013-5194
Publisher
IET
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1049/el.2012.0308
Project Code
11ZE1100, A Creative Research on ETRI R&DB System and Seed Project for enhancing ETRI Capability, Jee Kyoung Yong
Abstract
Solid electrolytes with a small on-state resistance enable a large read margin and high speed for programmable metallisation cell memory devices. It has been believed that the increase of control current is the only effective method of on-state resistance reduction, but it does not reflect a requirement for low power consumption. Proposed is a new approach to reduce on-state resistance while maintaining the control current. It was found that nitrogen doping into the SbTe chalcogenide glass, constituting solid electrolytes, decreased on-state resistance and stabilised the switching characteristics of the fabricated devices. The nitrogen-doped SbTe chalcogenide glass formed into the solid electrolyte of a small thickness, which resulted in reduced on-state resistance. © 2012 The Institution of Engineering and Technology.
KSP Keywords
Chalcogenide glass(ChG), Control current, Doping effects, High Speed, New approach, Nitrogen Doping, Nitrogen-doped, ON-state resistance, Programmable metallization cell, Resistance reduction, Solid electrolyte