상세정보
학술지
Nitrogen Doping Effect in Ag-SbTe Solid Electrolyte for Programmable Metallization Cell Memory
- 발행일
- 201205
- 출처
- Electronics Letters, v.48 no.8, pp.458-460
- ISSN
- 0013-5194
- 출판사
- IET
- 협약과제
- 11ZE1100, ETRI 연구역량 강화를 위한 R&D체계 구축 및 Seed형 기술개발을 위한 창의형 연구 사업, 지경용
- 초록
- Solid electrolytes with a small on-state resistance enable a large read margin and high speed for programmable metallisation cell memory devices. It has been believed that the increase of control current is the only effective method of on-state resistance reduction, but it does not reflect a requirement for low power consumption. Proposed is a new approach to reduce on-state resistance while maintaining the control current. It was found that nitrogen doping into the SbTe chalcogenide glass, constituting solid electrolytes, decreased on-state resistance and stabilised the switching characteristics of the fabricated devices. The nitrogen-doped SbTe chalcogenide glass formed into the solid electrolyte of a small thickness, which resulted in reduced on-state resistance. © 2012 The Institution of Engineering and Technology.
- KSP 제안 키워드
- Chalcogenide glass(ChG), Control current, Doping effects, High Speed, New approach, Nitrogen Doping, Nitrogen-doped, ON-state resistance, Programmable metallization cell, Resistance reduction, Solid electrolyte