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High-voltage power integrated circuit technology using SOI for driving plasma display panels
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- Authors
- Jongdae Kim, Tae Moon Roh, Sang-Gi Kim, Q. Sang Song, Dae Woo Lee, Jin-Gun Koo, Kyoung-Ik Cho, Dong Sung Ma
- Issue Date
- 2001-06
- Citation
- IEEE Transactions on Electron Devices, v.48, no.6, pp.1256-1263
- ISSN
- 0018-9383
- Publisher
- IEEE
- Language
- English
- Type
- Journal Article
- Abstract
- A new high-voltage (HV) power IC technology using high-performance p-LDMOS transistors and an excellent dielectric isolation technology has been proposed to apply scan driver of color plasma display panel (C-PDP) system. This novel technique reduces over 40 process steps and results in smaller chip size area of the developed scan driver than that of conventional driver using conventional power IC technology. The chip size and the rise time of the PDP scan driver IC developed by this technology could be reduced by 35% and 60%, respectively, compared with the conventional one.
- KSP Keywords
- Dielectric isolation, High Voltage, High performance, Integrated circuit technology, Isolation technology, Novel technique, Plasma display panel, Power IC, integrated circuit(IC), rise time