상세정보
학술지
High-voltage power integrated circuit technology using SOI for driving plasma display panels
- 발행일
- 200106
- 출처
- IEEE Transactions on Electron Devices, v.48 no.6, pp.1256-1263
- ISSN
- 0018-9383
- 출판사
- IEEE
- 협약과제
- 00MM2300, 휴대단말기용 DC-DC 컨버터 ASIC칩 개발, 김종대
- 초록
- A new high-voltage (HV) power IC technology using high-performance p-LDMOS transistors and an excellent dielectric isolation technology has been proposed to apply scan driver of color plasma display panel (C-PDP) system. This novel technique reduces over 40 process steps and results in smaller chip size area of the developed scan driver than that of conventional driver using conventional power IC technology. The chip size and the rise time of the PDP scan driver IC developed by this technology could be reduced by 35% and 60%, respectively, compared with the conventional one.
- KSP 제안 키워드
- Dielectric isolation, High Voltage, High performance, Isolation technology, Novel technique, Plasma display panel, Power IC, integrated circuit technology, rise time