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Journal Article
Etching Characteristics and Mechanisms of TiO2 Thin Films in HBr/Ar and Cl2/Ar Inductively-Coupled Plasmas
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- Authors
- Hanbyeol Jang, Alexander Efremov, Daehee Kim, Sungchil Kang, Sun Jin Yun, Kwang-Ho Kwon
- Issue Date
- 2012-03
- Citation
- Plasma Chemistry and Plasma Processing, v.32, no.2, pp.333-342
- ISSN
- 0272-4324
- Publisher
- Springer
- Language
- English
- Type
- Journal Article
- Abstract
- The TiO 2 etching characteristics and mechanisms in HBr/Ar and Cl 2/Ar inductively-coupled plasmas were investigated under fixed gas-mixing ratio and bias power conditions. It was found that in both systems, an increase in gas pressure from 4 to 10 mTorr results in a non-monotonic TiO 2 etching rate, while a variation of input power in the range 500-800 W causes a faster-than-linear acceleration of the etching process. Plasma diagnostics performed by Langmuir probes and zero-dimensional plasma modeling provided data on plasma parameters, steady-state densities, and fluxes of the active species on the etched surface. The model-based analysis of the etching mechanism showed that for the given set of processing parameters, the TiO 2 etch kinetics correspond to the transitional regime of ion-assisted chemical reaction in which a chemical-etch pathway dominates. © Springer Science+Business Media, LLC 2011.
- KSP Keywords
- Cl 2, Etched surface, Etching characteristics, Etching process, Gas Pressure, Inductively-coupled plasma(ICP), Input power, Langmuir probe, Linear acceleration, Mixing ratio, Model-based analysis