상세정보
학술지
Etching Characteristics and Mechanisms of TiO2 Thin Films in HBr/Ar and Cl2/Ar Inductively-Coupled Plasmas
- 저자
- 장한별, Alexander Efremov, 김대희, 강성칠, 윤선진, 권광호
- 발행일
- 201203
- 출처
- Plasma Chemistry and Plasma Processing, v.32 no.2, pp.333-342
- ISSN
- 0272-4324
- 출판사
- Springer
- 초록
- The TiO 2 etching characteristics and mechanisms in HBr/Ar and Cl 2/Ar inductively-coupled plasmas were investigated under fixed gas-mixing ratio and bias power conditions. It was found that in both systems, an increase in gas pressure from 4 to 10 mTorr results in a non-monotonic TiO 2 etching rate, while a variation of input power in the range 500-800 W causes a faster-than-linear acceleration of the etching process. Plasma diagnostics performed by Langmuir probes and zero-dimensional plasma modeling provided data on plasma parameters, steady-state densities, and fluxes of the active species on the etched surface. The model-based analysis of the etching mechanism showed that for the given set of processing parameters, the TiO 2 etch kinetics correspond to the transitional regime of ion-assisted chemical reaction in which a chemical-etch pathway dominates. © Springer Science+Business Media, LLC 2011.
- KSP 제안 키워드
- Cl 2, Etched surface, Etching characteristics, Etching process, Gas Pressure, Inductively-coupled plasma(ICP), Input power, Langmuir probe, Linear acceleration, Mixing ratio, Model-based analysis