상세정보
학술지
Fabrication of Amorphous InGaZnO Thin-Film Transistor-Driven Flexible Thermal and Pressure Sensors
- 발행일
- 201207
- 출처
- Semiconductor Science and Technology, v.27 no.10, pp.1-6
- ISSN
- 0268-1242
- 출판사
- Institute of Physics (IOP)
- 협약과제
- 11VB2100, 디스플레이용 산화물 반도체 조성 및 고밀도 산화물 반도체 타켓 개발, 정우석
- 초록
- In this work, we present the results concerning the use of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) as a driving transistor of the flexible thermal and pressure sensors which are applicable to artificial skin systems. Although the a-IGZO TFT has been attracting much attention as a driving transistor of the next-generation flat panel displays, no study has been performed about the application of this new device to the driving transistor of the flexible sensors yet. The proposed thermal sensor pixel is composed of the series-connected a-IGZO TFT and ZnO-based thermistor fabricated on a polished metal foil, and the ZnO-based thermistor is replaced by the pressure sensitive rubber in the pressure sensor pixel. In both sensor pixels, the a-IGZO TFT acts as the driving transistor and the temperature/pressure-dependent resistance of the ZnO-based thermistor/pressure- sensitive rubber mainly determines the magnitude of the output currents. The fabricated a-IGZO TFT-driven flexible thermal sensor shows around a seven times increase in the output current as the temperature increases from 20°C to 100°C, and the a-IGZO TFT-driven flexible pressure sensors also exhibit high sensitivity under various pressure environments. © 2012 IOP Publishing Ltd.
- KSP 제안 키워드
- Amorphous InGaZnO, Artificial skin, Flexible pressure sensor, Flexible sensors, High Sensitivity, Metal foil, Next-generation, Thin-Film Transistor(TFT), Zinc oxide(ZnO), a-IGZO TFTs, amorphous indium-gallium-zinc oxide(a-IGZO)