상 변화 메모리를 구성하는 활성물질인 상 변화 메모리 재료는 에너지 입력에 따라 가역적으로 상이 전이되는 특징을 가지고 있으며 Ga 첨가에 의해 결정화 온도가 상승하고 비정질 안정성이 높아지는 특성을 나타낸다. 본 연구에서는 Ga을 포함하는 상 변화 메모리 재료의 형성에 GaGe 스퍼터링 전력이 미치는 영향을 고찰하였다. GaGe 스퍼터링 전력이 0에서 75 W까지의 범위에서 증가함에 따라 박막의 증착 속도는 최대 약 127 nm까지 선형적으로 증가하고 표면 거칠기는 일정하게 유지되었다. 박막에 포함되는 Ga의 농도는 60 W의 임계 전력 이상에서 급격하게 증가하는 현상이 관찰되었다. 이러한 GaGe 스퍼터링 전력의 효과는 29.77℃인 Ga의 낮은 녹는점에 의해 스퍼터링과 더불어 Ga 증발이 동시에 발생하여 나타나는 결과임을 확인하였다.
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