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학술지 Fabrication of RS flip-flops using Y-Ba-Cu-O ramp-edge junctions and their operation
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저자
J. H. Park, 김준호, 성건용, C. H. Kim, K. R. Jung, J. H. Kang, T. S. Hahn
발행일
200103
출처
IEEE Transactions on Applied Superconductivity, v.11 no.1, pp.932-935
ISSN
1051-8223
출판사
IEEE
DOI
https://dx.doi.org/10.1109/77.919498
협약과제
00ZB1100, 국제경쟁력 강화를 위한 정보통신 핵심원천기술 연구, 이번
초록
We fabricated single flux quantum RS flip-flop circuits by using ramp-edge Josephson junctions and tested their performance. The junctions were constructed with two Y1Ba2Cu3O7-x (YBCO) electrodes and a barrier layer. As barrier materials we used cobalt-doped YBCO. To insulate between YBCO layers we used Sr2AlTaO6(SAT) thin films. We also fabricated RS flip-flop circuits by using YBCO ground planes to reduce the inductance of YBCO film. The fabricated Josephson junction showed typical RSJ-like current-voltage (I-V) characteristics above 50K. We could successfully demonstrate the correct operation of the RS flip-flop circuits at the temperatures near 50K. We used a computer controlled digital measurement set-up to test the circuits. The RS flip-flop circuit fabricated on a ground plane showed more definite set and reset states on the voltage-flux(V-??) modulation curves of the read SQUID than those of the circuit made without ground plane. This may be attributed to the shielding effect by a YBCO ground plane.
KSP 제안 키워드
Barrier layers, Barrier materials, Cobalt-doped, Current-voltage (I-V) characteristics, Digital measurement, Flip-flop, Josephson junctions, Measurement setup, Ramp-edge, Shielding effect, Y-Ba-Cu-O