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Fabrication of interface-controlled Josephson junctions using Sr/sub 2/AlTaO/sub 6/ insulating layers
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- Authors
- Gun Yong Sung, Jun Ho Kim
- Issue Date
- 2001-03
- Citation
- IEEE Transactions on Applied Superconductivity, v.11, no.1, pp.151-I54
- ISSN
- 1051-8223
- Publisher
- IEEE
- Language
- English
- Type
- Journal Article
- Abstract
- We fabricated ramp-edge Josephson junctions with barriers formed by interface treatments instead of epitaxially grown barrier layers. A low-dielectric Sr2AlTaO6(SAT) layer was used as an ion-milling mask as well as an insulating layer for the ramp-edge junctions. An ion-milled YBa2Cu3O7-x (YBCO)-edge surface was not exposed to solvent through all fabrication procedures. The barriers were produced by structural modification at the edge of the YBCO base electrode using high energy ion-beam treatment prior to deposition of the YBCO counter electrode. We investigated the effects of high energy ion-beam treatment, annealing, and counter electrode deposition temperature on the characteristics of the interface-controlled Josephson junctions. The junction parameters such as Tc, Ic, RN were measured and discussed in relation to the barrier layer depending on the process parameters.
- KSP Keywords
- Deposition temperature, Edge surface, Epitaxially grown, High energy ion, Insulating layer, Ion-milling, Josephson junction, Process Parameters, Ramp-edge, barrier layers, counter electrode