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Journal Article
The characteristics of sub-10nm gate-length erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect-transistors
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- Authors
- Moongyu Jang, Seongjae Lee
- Issue Date
- 2012-01
- Citation
- Thin Solid Films, v.520, no.6, pp.2166-2169
- ISSN
- 0040-6090
- Publisher
- Elsevier
- Language
- English
- Type
- Journal Article
- Abstract
- 10 and 6 nm erbium-silicided n-type Schottky barrier metal-oxide- semiconductor field-effect transistors (SB-MOSFETs) were manufactured. The manufactured 10 nm n-type SB-MOSFET showed a large on/off current ratio (> 10 6) with low leakage current less than 10 - 5 μA/μm due to the existence of the robust Schottky barrier between source and channel region. The saturation currents were 550 and 320 μA/μm when drain and gate voltages were 2 V and 3 V, for the 10 and 6 nm erbium-silicided n-type SB-MOSFETs, respectively. The manufactured SB-MOSFETs exhibited superior short channel characteristics due to the existence of Schottky barrier between source and channel region. © 2011 Elsevier B.V. All rights reserved.
- KSP Keywords
- 3 V, AND gate, Barrier Metal, Channel Characteristics, Field Effect Transistor(FET), Low leakage current, Metal-oxide(MOX), SB-MOSFET, Schottky barrier, Short channel, Sub-10 nm