상세정보
학술지
The Characteristics of Sub-10 nm Gate-length Erbium-Silicided n-Type Schottky Barrier Metal-Oxide-Semiconductor Field-Effect-Transistors
- 저자
- 장문규, 이성재
- 발행일
- 201201
- 출처
- Thin Solid Films, v.520 no.6, pp.2166-2169
- ISSN
- 0040-6090
- 출판사
- Elsevier,
- 초록
- 10 and 6 nm erbium-silicided n-type Schottky barrier metal-oxide- semiconductor field-effect transistors (SB-MOSFETs) were manufactured. The manufactured 10 nm n-type SB-MOSFET showed a large on/off current ratio (> 10 6) with low leakage current less than 10 - 5 μA/μm due to the existence of the robust Schottky barrier between source and channel region. The saturation currents were 550 and 320 μA/μm when drain and gate voltages were 2 V and 3 V, for the 10 and 6 nm erbium-silicided n-type SB-MOSFETs, respectively. The manufactured SB-MOSFETs exhibited superior short channel characteristics due to the existence of Schottky barrier between source and channel region. © 2011 Elsevier B.V. All rights reserved.
- KSP 제안 키워드
- 3 V, AND gate, Barrier Metal, Channel Characteristics, Field-effect transistors(FETs), Metal-oxide(MOX), N-type, ON/OFF current ratio, SB-MOSFET, Schottky barrier, Short channel