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A small-signal RF model and its parameter extraction for substrate effects in RF MOSFETs
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- Authors
- Seonghearn Lee, Cheon Soo Kim, Hyun Kyu Yu
- Issue Date
- 2001-07
- Citation
- IEEE Transactions on Electron Devices, v.48, no.7, pp.1374-1379
- ISSN
- 0018-9383
- Publisher
- IEEE
- Language
- English
- Type
- Journal Article
- Abstract
- We propose a physically acceptable small-signal model incorporating substrate effects, in order to eliminate the severe frequency-dependence of the intrinsic drain-source resistance observed from a conventional model of RF Si MOSFETs. This model is based on the substrate network where a parallel RC circuit is connected in series with the drain junction capacitance. It is demonstrated that the substrate effects result in the frequency-dispersion of the effective drain-source resistance and capacitance below 10 GHz. An accurate extraction technique using a simple curve-fit approach is developed to determine substrate parameters directly, and their bulk voltage-dependencies are presented in detail. The validity of this model is partially proved by finding intrinsic parameters exhibiting frequency-independence up to 10 GHz. Better agreement with measured S-parameters is achieved by using the new substrate model rather than the conventional one, verifying the accuracy of the physical model and extraction tech nique.
- KSP Keywords
- 10 Ghz, Curve-fit, Extraction technique, Frequency Dependence, Intrinsic parameters, New substrate, Physical model, RC circuit, RF MOSFETs, Small-signal model, Source resistance