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학술지 Influence of Growth Temperature of Transparent Conducting Oxide Layer on Cu(In,Ga)Se2 Thin-Film Solar Cells
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저자
조대형, 정용덕, 이규석, 박래만, 김경현, 최해원, 김제하
발행일
201201
출처
Thin Solid Films, v.520 no.6, pp.2115-2118
ISSN
0040-6090
출판사
Elsevier,
DOI
https://dx.doi.org/10.1016/j.tsf.2011.08.083
협약과제
11MB3100, 반응성 스퍼터링을 이용한 CIGS 초박막 고효율 태양전지 기술 개발, 김제하
초록
We have studied the influence of growth temperature (T G) in the deposition of an indium tin oxide (ITO) transparent conducting oxide layer on Cu(In,Ga)Se 2 (CIGS) thin-film solar cells. The ITO films were deposited on i-ZnO/glass and i-ZnO/CdS/CIGS/Mo/glass substrates using radio-frequency magnetron sputtering at various T G up to 350 °C. Both the resistivity of ITO and the interface quality of CdS/CIGS strongly depend on T G. For a T G ?돞 200 °C, a reduction in the series resistance enhanced the solar cell performance, while the p-n interface of the device was found to become deteriorated severely at T G > 200 °C. CIGS solar cells with ITO deposited at T G = 200 °C showed the best performance in terms of efficiency. © 2011 Elsevier B.V. All rights reserved.
키워드
Cd diffusion, CIGS solar cell, Growth temperature, ITO thin film, Series resistance
KSP 제안 키워드
At t, Best performance, CIGS solar cell, Cd diffusion, Glass substrate, ITO film, ITO thin film, Oxide layer, Petri net(PN), Radio Frequency(RF), Radio frequency magnetron sputtering