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Influence of Growth Temperature of Transparent Conducting Oxide Layer on Cu(In,Ga)Se2 Thin-Film Solar Cells
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- Authors
- Dae-Hyung Cho, Yong-Duck Chung, Kyu-Seok Lee, Nae-Man Park, Kyung-Hyun Kim, Hae-Won Choi, Jeha Kim
- Issue Date
- 2012-01
- Citation
- Thin Solid Films, v.520, no.6, pp.2115-2118
- ISSN
- 0040-6090
- Publisher
- Elsevier,
- Language
- English
- Type
- Journal Article
- Abstract
- We have studied the influence of growth temperature (T G) in the deposition of an indium tin oxide (ITO) transparent conducting oxide layer on Cu(In,Ga)Se 2 (CIGS) thin-film solar cells. The ITO films were deposited on i-ZnO/glass and i-ZnO/CdS/CIGS/Mo/glass substrates using radio-frequency magnetron sputtering at various T G up to 350 °C. Both the resistivity of ITO and the interface quality of CdS/CIGS strongly depend on T G. For a T G ?돞 200 °C, a reduction in the series resistance enhanced the solar cell performance, while the p-n interface of the device was found to become deteriorated severely at T G > 200 °C. CIGS solar cells with ITO deposited at T G = 200 °C showed the best performance in terms of efficiency. © 2011 Elsevier B.V. All rights reserved.
- KSP Keywords
- At t, Best performance, CIGS solar cell, Glass substrate, ITO film, Oxide layer, Petri net(PN), Radio Frequency(RF), Radio frequency magnetron sputtering, Solar cell performance, Thin film solar cells