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Trenched sinker LDMOSFET (TS-LDMOS) structure for high power amplifier application above 2 GHz
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- Authors
- Cheon Soo Kim, Joung-Woo Park, Hyun Kyu Yu
- Issue Date
- 2001-12
- Citation
- International Electron Devices Meeting (IEDM) 2001, pp.887-890
- Language
- English
- Type
- Conference Paper
- Abstract
- New trenched sinker LDMOSFET structure is proposed for the application of high power RF amplifier. By adopting low temperature deep trench technology, the sinker area can be shrunk down more than 70% compared with the conventional diffusion type. The RF performance of proposed device with channel width of 5 mm showed a small signal gain of 19.3 dB at 2 GHz and 14.8 dB at 3 GHz, and maximum peak power of 30 dBm at V/sub DD/ of 26 V. Furthermore, the trench sinker (or guard), that is applied to suppress the coupling between inductors, also showed a excellent blocking performance at frequency range from 0.5 GHz to 20 GHz.
- KSP Keywords
- 5 GHz, Blocking performance, Channel Width, Deep Trench, Diffusion-type, Frequency Range, High power amplifier(HPA), Low temperature(LT), Peak power, Power RF amplifier, RF performance