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Conference Paper Trenched sinker LDMOSFET (TS-LDMOS) structure for high power amplifier application above 2 GHz
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Authors
Kim Cheon Soo, Park Jungwoo, Yu Hyun Kyu
Issue Date
200112
Source
International Electron Devices Meeting (IEDM) 2001, pp.887-890
DOI
https://dx.doi.org/10.1109/IEDM.2001.979655
KSP Keywords
High power amplifier(HPA), power amplifiers(PAs)