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학술대회 Piezoelectric membrane acoustic devices
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저자
고상춘, 김용철, S.S. Lee, 최승호, Sang Ryong Kim
발행일
200201
출처
International Conference on Micro Electro Mechanical Systems (MEMS) 2002, pp.296-299
DOI
https://dx.doi.org/10.1109/MEMSYS.2002.984261
협약과제
01MB4700, 광 회선분배용 대용량 MOEMS 소자 기술, 전치훈
초록
This paper reports the 3×3×0.003 mm3 piezoelectric membrane acoustic device, which works as a microphone and a microspeaker. It has a 0.5 μm thick zinc oxide (ZnO) piezoelectric thin film on a 1.5 μm thick low stress silicon nitride membrane, made of LPCVD. The maximum deflection in the center of membrane, using laser Doppler vibrometer, is 1 μm at 7.3 kHz with input drive 15 VP-K (zero-peak). The output sound pressure level (SPL) of microspeaker is 76.3 dB SPL at 7.3 kHz, and 83.1 dB SPL at 13.3 kHz with input drive 15V. The distance between reference microphone and piezoelectric microspeaker is 1 cm. The sensitivity of microphone is 0.51 mV/Pa at 7.3 kHz with noise level of 18 dB SPL.
KSP 제안 키워드
Laser doppler vibrometer, Low stress, Piezoelectric membrane, Piezoelectric thin film, Sound pressure level, Zinc oxide(ZnO), acoustic device, maximum deflection, noise level, silicon nitride membrane, thin film(TF)