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Conference Paper
필드 플레이트 구조에 대한 GaN FET 항복전압특성 영향
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- Issue Date
- 2015-06
- Citation
- 대한전자공학회 종합 학술 대회 (하계) 2015, pp.326-329
- Publisher
- 대한전자공학회
- Language
- Korean
- Type
- Conference Paper
- Abstract
- This paper presents various field plates (FPs) fabricated on GaN Field Effect Transistors (FETs) using AlGaN/GaN on sapphire substrates. GaN FETs with six different FPs were fabricated to compare with their FPs and lengths of FPs in terms of their breakdown voltage characteristics. The fabricated GaN FET with the gamma-shaped gate FP exhibited a breakdown voltage of 1190 V for a gate-to-drain spacing of 15㎛, while the GaN FET without any FP (a planar gate) showed a breakdown voltage of 1050 V for the same gate-to-drain spacing. For the GaN FETs with 10㎛ gate-to-drain spacing and gamma-shaped gate FPs, they were varied 0~2 ㎛ in the length of the gamma-shaped gate FPs and the GaN FET with 0.5㎛-length gamma-shaped gate FP showed more 50~140 V than the others. And in another processed wafer, the GaN FET with the source FP and the gamma-shaped FP together had a breakdown voltage of 1480 V more than 870 V with only the source FP for a gate-to-drain spacing of 16㎛.
- KSP Keywords
- Breakdown Voltage, Field Effect Transistor(FET), Field plate, GaN FET, Gate-to-drain spacing, Sapphire substrates, voltage characteristics