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학술지 Effects of Photowashing Treatment on Gate Leakage Current of GaAs Metal-Semiconductor Field-Effect Transistors
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저자
최경진, 문재경, 박민, 김해천, 이종람
발행일
200205
출처
Japanese Journal of Applied Physics, v.41 no.5A, pp.2894-2899
ISSN
0021-4922
출판사
Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
DOI
https://dx.doi.org/10.1143/jjap.41.2894
협약과제
02MB3300, 5GHz 대역 고효율 전력 MMIC, 박민
초록
Effects of photowashing treatment on gate leakage current (IGD) of a GaAs metal-semiconductor field-effect transistor were studied by observing changes in atomic composition and band bending at the surface of GaAs through X-ray photoemission spectroscopy. The photowashing treatment produces Ga2O3 on the surface of GaAs; leaving acceptor-type Ga antisites behind under the oxide. The Ga antisites played a role in reducing the maximum electric field at the drain edge of the gate, leading to the decrease of IGD. The longer photowashing time produced thicker oxide on the surface of GaAs, acting as a conducting pass for electrons, leading to the increase of IGD.
KSP 제안 키워드
Atomic composition, Field-effect transistors(FETs), Maximum electric field, Metal-semiconductor field-effect transistor, X-ray photoemission spectroscopy, band bending, gate leakage current