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Journal Article
Effects of Photowashing Treatment on Gate Leakage Current of GaAs Metal-Semiconductor Field-Effect Transistors
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- Authors
- Kyoung Jin Choi, Jae Kyoung Moon, Min Park, Haechon Kim, Jong-Lam Lee
- Issue Date
- 2002-05
- Citation
- Japanese Journal of Applied Physics, v.41, no.5A, pp.2894-2899
- ISSN
- 0021-4922
- Publisher
- Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
- Language
- English
- Type
- Journal Article
- Abstract
- Effects of photowashing treatment on gate leakage current (IGD) of a GaAs metal-semiconductor field-effect transistor were studied by observing changes in atomic composition and band bending at the surface of GaAs through X-ray photoemission spectroscopy. The photowashing treatment produces Ga2O3 on the surface of GaAs; leaving acceptor-type Ga antisites behind under the oxide. The Ga antisites played a role in reducing the maximum electric field at the drain edge of the gate, leading to the decrease of IGD. The longer photowashing time produced thicker oxide on the surface of GaAs, acting as a conducting pass for electrons, leading to the increase of IGD.
- KSP Keywords
- Atomic composition, Field-effect transistors(FETs), Maximum electric field, Metal-semiconductor field-effect transistor, X-ray photoemission spectroscopy, band bending, gate leakage current