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RF performance tradeoffs of SiGe HBT fabricated by reduced pressure chemical vapor deposition
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- Authors
- Bongki Mheen, Dongwoo Suh, Hong Seung Kim, Seung-Yun Lee, Chan Woo Park, Sang Hoon Kim, Kyu-Hwan Shim, Jin-Yeong Kang
- Issue Date
- 2002-06
- Citation
- International Microwave Symposium (IMS) 2002, pp.413-416
- Language
- English
- Type
- Conference Paper
- Abstract
- In this paper we developed high cutoff frequency and low noise SiGe HBT devices using reduced pressure chemical vapor deposition (RPCVD) process of low cost and high throughput. In addition the RPCVD can alleviate large thermal variation even on a single wafer as occurs in ultra-high vacuum chemical vapor deposition (UHVCVD) process. We also adopted the cheap localized oxidation of silicon (LOCOS) instead of shallow trench for the isolation of terminals to reduce the parasitic from linkage at RF arena. The cutoff frequency and maximum oscillation frequency of SiGe HBT having the emitter size of 1×2.5 μm2 were 48 and 62 GHz, respectively. With the tradeoff of base profile and adopting finger-type base structure the measured minimum noise figure of 1.5 dB and associated gain of 16 dB at 1.5 GHz consuming the collector current of 3.1 mA were also observed in the low noise device. Limitation of noise performance related with this process was also discussed.
- KSP Keywords
- 5 GHz, Base structure, High throughput(HTP), Low noise, Low-cost, Minimum noise figure, Noise Figure(NF), Noise performance, Oxidation of silicon, Performance tradeoffs, RF performance