상세정보
학술지
Characterization of Via Etching in CHF3/CF4 Magnetically Enhanced Reactive Ion Etching Using Neural Networks
- 발행일
- 200206
- 출처
- ETRI Journal, v.24 no.3, pp.211-220
- ISSN
- 1225-6463
- 출판사
- 한국전자통신연구원 (ETRI)
- 협약과제
- 02ZM1100, 반도체 Foundry 운영사업, 김보우
- 초록
- This study characterizes an oxide etching process in a magnetically enhanced reactive ion etching (MERIE) reactor with a CHF3/CF4 gas chemistry. We use a statistical 24-1 experimental design plus one center point to characterize the relationships between the process factors and etch responses. The factors that we varied in the design include RF power, pressure, and gas composition, and the modeled etch responses were the etch rate, etch selectivity to TiN, and uniformity. The developed models produced 3D response plots. Etching of SiO2 mainly depends on F density and ion bombardment. SiO2 etch selectivity to TiN sensitively depends on the F density in the plasma and the effects of ion bombardment. The process conditions for a high etch selectivity are a 0.3 to 0.5 CF4 flow ratio and a ??600 V to ??650 V DC bias voltage according to the process pressure in our experiment. Etching uniformity was improved with an increase in the CF4 flow ratio in the gas mixture, an increase in the source power, and a higher pressure. Our characterization of via etching in a CHF3/CF4 MERIE using neural networks was successful, economical, and effective. The results provide highly valuable information about etching mechanisms and optimum etching conditions.
- KSP 제안 키워드
- Center point, DC bias voltage, Etch rates, Etch selectivity, Etching conditions, Etching process, Experimental Design, Gas mixture, Oxide etching, Process conditions, Process factors