상세정보
학술지
Complementary Metal-Oxide Semiconductor (CMOS) Image Sensor: An Insight as a Point-of-Care Label-Free Immunosensor
- 발행일
- 201012
- 출처
- Analytical Sciences, v.26 no.12, pp.1215-1217
- ISSN
- 0910-6340
- 출판사
- The Japan Society for Analytical Chemistry (JSAC)
- 초록
- The present paper examines the efficiency of a complementary metal-oxide semiconductor (CMOS) using an indium nanoparticle (InNP) substrate for the high-sensitivity detection of antigen/antibody interactions at concentrations as low as 100 pg/ml under normal light. Metal NPs coated with antigen/antibody layers act as a dielectric layer on the conducting sphere, which enhances the number of photons hitting the sensor surface through a light-scattering effect. This photon number is proportional to the digital number observed with the CMOS sensor for detecting antigen/antibody interactions. © 2010 The Japan Society for Analytical Chemistry.
- KSP 제안 키워드
- Analytical chemistry, CMOS Sensor, Complementary metal-oxide-semiconductor(CMOS), Conducting sphere, Detection of antigen/antibody, High-sensitivity detection, Image Sensor, Metal-oxide(MOX), Photon number, Point-of-care, dielectric layer