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Journal Article Complementary Metal-Oxide Semiconductor (CMOS) Image Sensor: An Insight as a Point-of-Care Label-Free Immunosensor
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Authors
Karthikeyan KANDASAMY, Mohana MARIMUTHU, Gun Yong SUNG, Chang Geun AHN, Sanghyo KIM
Issue Date
2010-12
Citation
Analytical Sciences, v.26, no.12, pp.1215-1217
ISSN
0910-6340
Publisher
The Japan Society for Analytical Chemistry (JSAC)
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.2116/analsci.26.1215
Abstract
The present paper examines the efficiency of a complementary metal-oxide semiconductor (CMOS) using an indium nanoparticle (InNP) substrate for the high-sensitivity detection of antigen/antibody interactions at concentrations as low as 100 pg/ml under normal light. Metal NPs coated with antigen/antibody layers act as a dielectric layer on the conducting sphere, which enhances the number of photons hitting the sensor surface through a light-scattering effect. This photon number is proportional to the digital number observed with the CMOS sensor for detecting antigen/antibody interactions. © 2010 The Japan Society for Analytical Chemistry.
KSP Keywords
Analytical chemistry, CMOS Sensor, Complementary metal-oxide-semiconductor(CMOS), Conducting sphere, Detection of antigen/antibody, High-sensitivity detection, Image Sensor, Metal-oxide(MOX), Photon number, Point-of-care, dielectric layer