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Polymeric ferroelectric and oxide semiconductor-based fully transparent memristor cell
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- Authors
- Sung-Min Yoon, Shinhyuk Yang, Soon-Won Jung, Chun-Won Byun, Min-Ki Ryu, Woo-Seok Cheong, ByeongHoon Kim, HimChan Oh, Sang-Hee Ko Park, Chi-Sun Hwang, Seung-Youl Kang, Ho-Jun Ryu, Byoung-Gon Yu
- Issue Date
- 2011-03
- Citation
- Applied Physics A : Materials Science & Processing, v.102, no.4, pp.983-990
- ISSN
- 0947-8396
- Publisher
- Springer
- Language
- English
- Type
- Journal Article
- Abstract
- Employment of the memristor for the next-generation large-area electronics can be expected to release various devices with interesting functions. In this article, for the first time we proposed a fully transparent memristor cell, which was composed of one-memory thinfilm transistor (TFT) and one-switch TFT using an oxide semiconducting active channel. A poly(vinylidene fluoridetrifluoroethylene) [P(VDF-TrFE)] was used as a gate insulator for the memory TFT and the channel conductance of the TFT was modulated by changing the quantity and direction of ferroelectric polarization. The fabrication procedures were designed so that the proposed transparent memristor cell could be implemented at process temperature below 200°C. It was successfully conformed that the fabricated memristor cell exhibited good TFT behaviors and modulated output characteristics programmed into the memory TFT. © Springer-Verlag 2011.
- KSP Keywords
- Active channel, Large-area electronics, Next-generation, Process temperature, VDF-TrFE(PZT/P), ferroelectric polarization, gate insulator, output characteristics, oxide semiconductor, transparent memristor