상세정보
학술지
Polymeric Ferroelectric & Oxide Semiconductor-Based Fully Transparent Memristor Cell
- 발행일
- 201103
- 출처
- Applied Physics A : Materials Science & Processing, v.102 no.4, pp.983-990
- ISSN
- 0947-8396
- 출판사
- Springer
- 협약과제
- 10MB3700, 고품위 Plastic AMOLED 원천기술 개발, 유병곤
- 초록
- Employment of the memristor for the next-generation large-area electronics can be expected to release various devices with interesting functions. In this article, for the first time we proposed a fully transparent memristor cell, which was composed of one-memory thinfilm transistor (TFT) and one-switch TFT using an oxide semiconducting active channel. A poly(vinylidene fluoridetrifluoroethylene) [P(VDF-TrFE)] was used as a gate insulator for the memory TFT and the channel conductance of the TFT was modulated by changing the quantity and direction of ferroelectric polarization. The fabrication procedures were designed so that the proposed transparent memristor cell could be implemented at process temperature below 200°C. It was successfully conformed that the fabricated memristor cell exhibited good TFT behaviors and modulated output characteristics programmed into the memory TFT. © Springer-Verlag 2011.
- KSP 제안 키워드
- Active channel, Gate insulator, Next-generation, Oxide semiconductor, Process temperature, VDF-TrFE, ferroelectric polarization, large-area electronics, output characteristics, transparent memristor