상세정보
학술지
Impact of Amorphous Titanium Oxide Film on the Device Stability of Al/TiO2/Al Resistive Memory
- 저자
- 정후영, 김성규, 이정용, 최성율
- 발행일
- 201103
- 출처
- Applied Physics A : Materials Science & Processing, v.102 no.4, pp.967-972
- ISSN
- 0947-8396
- 출판사
- Springer
- 협약과제
- 10MB6600, 플렉서블 PoRAM 소재 원천기술 개발, 최성율
- 초록
- We have investigated the role of amorphous titanium oxide film in the reliable bipolar resistive switching of Al/TiO2/Al resistive random access memory devices. As TiO2 deposition temperature decreased, a more stable endurance characteristic was obtained. We proposed that the degradation of the bipolar resistive switching property of Al/TiO2/Al devices is closely related to the imperfect migration of oxygen ions between the top insulating interface layer and the oxygen-deficient titanium oxide during the set and reset operations. In addition, the dependence of the TiO 2 film thickness on the switching property was also studied. As the thickness of the film increased, a reduction in the resistance of the high resistance state rapidly appeared. We attribute the improved endurance performance of thin and low-temperature grown TiO2 devices to the amorphous state with a low film density. © Springer-Verlag 2011.
- KSP 제안 키워드
- Amorphous state, Amorphous titanium oxide, Bipolar resistive switching, Deposition temperature, Device stability, Endurance characteristic, Film density, Low temperature(LT), Oxygen ions, Oxygen-deficient titanium oxide, Resistive Random Access Memory(RRAM)