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Impact of amorphous titanium oxide film on the device stability of Al/TiO2/Al resistive memory
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- Authors
- Hu Young Jeong, Sung Kyu Kim, Jeong Yong Lee, Sung-Yool Choi
- Issue Date
- 2011-03
- Citation
- Applied Physics A : Materials Science & Processing, v.102, no.4, pp.967-972
- ISSN
- 0947-8396
- Publisher
- Springer
- Language
- English
- Type
- Journal Article
- Abstract
- We have investigated the role of amorphous titanium oxide film in the reliable bipolar resistive switching of Al/TiO2/Al resistive random access memory devices. As TiO2 deposition temperature decreased, a more stable endurance characteristic was obtained. We proposed that the degradation of the bipolar resistive switching property of Al/TiO2/Al devices is closely related to the imperfect migration of oxygen ions between the top insulating interface layer and the oxygen-deficient titanium oxide during the set and reset operations. In addition, the dependence of the TiO 2 film thickness on the switching property was also studied. As the thickness of the film increased, a reduction in the resistance of the high resistance state rapidly appeared. We attribute the improved endurance performance of thin and low-temperature grown TiO2 devices to the amorphous state with a low film density. © Springer-Verlag 2011.
- KSP Keywords
- Amorphous state, Amorphous titanium oxide, Deposition temperature, Device stability, Endurance characteristic, Film density, Film thickness, Oxygen ions, Oxygen-deficient titanium oxide, Resistive Memory, Resistive Random Access Memory