상세정보
학술지
CW operation and threshold characteristics of all-monolithic InAlGaAs 1.55-μm VCSELs grown by MOCVD
- 발행일
- 200208
- 출처
- IEEE Photonics Technology Letters, v.14 no.8, pp.1031-1033
- ISSN
- 1041-1135
- 출판사
- IEEE
- 협약과제
- 01MB4100, 장파장 표면방출 레이저 어레이, 신재헌
- 초록
- We demonstrate an all-monolithic metal-organic chemical vapor epitaxy (MOCVD)-grown 1.55-μm vertical-cavity surface-emitting laser operating continuous wave up to 35 °C. All the structure is based on the InAlGaAs-InP material system grown by a single step of MOCVD. Wet oxidation of a strained In0.4Al0.6As layer is used for the current confinement. The threshold current, threshold voltage and the external quantum efficiency at room temperature are about 1.6 mA, 2.3 V, and 5.4%, respectively.
- KSP 제안 키워드
- 3 V, External Quantum Efficiency, InAlGaAs-InP, InP material, Material system, Metal-Organic, Organic chemical, Room-temperature, Single step, Threshold characteristics, Threshold current