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Journal Article
CW operation and threshold characteristics of all-monolithic InAlGaAs 1.55-μm VCSELs grown by MOCVD
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- Authors
- J.-H. Shin, B.-S. Yoo, W.-S. Han, O.-K. Kwon, Y.-G. Ju, J.-H. Lee
- Issue Date
- 2002-08
- Citation
- IEEE Photonics Technology Letters, v.14, no.8, pp.1031-1033
- ISSN
- 1041-1135
- Publisher
- IEEE
- Language
- English
- Type
- Journal Article
- Abstract
- We demonstrate an all-monolithic metal-organic chemical vapor epitaxy (MOCVD)-grown 1.55-μm vertical-cavity surface-emitting laser operating continuous wave up to 35 °C. All the structure is based on the InAlGaAs-InP material system grown by a single step of MOCVD. Wet oxidation of a strained In0.4Al0.6As layer is used for the current confinement. The threshold current, threshold voltage and the external quantum efficiency at room temperature are about 1.6 mA, 2.3 V, and 5.4%, respectively.
- KSP Keywords
- 3 V, External Quantum Efficiency, InAlGaAs-InP, InP material, Material system, Metal-Organic, Organic chemical, Room-temperature, Single step, Threshold characteristics, Threshold current