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Journal Article Reliability of planar InP-InGaAs avalanche photodiodes with recess etching
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Authors
Jihoun Jung, Yong Hwan Kwon, Kyung Sook Hyun, Ilgu Yun
Issue Date
2002-08
Citation
IEEE Photonics Technology Letters, v.14, no.8, pp.1160-1162
ISSN
1041-1135
Publisher
IEEE
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1109/LPT.2002.1022004
Abstract
This letter presents the reliability of planar InP-InGaAs avalanche photodiodes (APDs) with recess etching, which is very crucial for the commercial 10-Gb/s optical receiver application. The reliability is examined by accelerated life tests by monitoring dark current and breakdown voltage. The activation energy of the degradation mechanism and device median lifetime were estimated. Based on the test results, it is concluded that the planar InP-InGaAs APDs with recess etching shows the sufficient reliability for practical 10-Gb/s optical receivers.
KSP Keywords
Accelerated life test, Activation Energy, Avalanche photo diode(APD), Breakdown voltage(BDV), Dark Current, Optical receiver, degradation mechanism