상세정보
학술지
Suppression in the Negative Bias Illumination Instability of Zn-Sn-O Transistor Using Oxygen Plasma Treatment
- 발행일
- 201109
- 출처
- Applied Physics Letters, v.99 no.10, pp.1-3
- ISSN
- 0003-6951
- 출판사
- American Institute of Physics (AIP)
- 초록
- This study examined the effect of oxygen plasma treatment on light-enhanced bias instability in Zn-Sn-O (ZTO) thin film transistors (TFTs). The treated ZTO TFT exhibited only a threshold voltage (Vth) shift of -2.05 V under negative bias illumination stress (NBIS) conditions, whereas the pristine device suffered from a negative Vth shift of 3.76 V under identical conditions. X-ray photoelectron spectroscopic analysis revealed that the oxygen vacancy defect density was diminished via the oxygen plasma treatment. This suggests the Vth degradation under NBIS is due to photo-transition of oxygen vacancy defects. © 2011 American Institute of Physics.
- KSP 제안 키워드
- Bias instability, Effect of oxygen, Spectroscopic Analysis, Thin-Film Transistor(TFT), Vth shift, X-ray photoelectron spectroscopic, Zn-Sn-O(ZTO), defect density, negative bias illumination stress(NBIS), oxygen plasma treatment, oxygen vacancy defects