상세정보
학술지
Active-Matrix Field Emission Display with Amorphous Silicon Thin-Film Transistors and Mo-Tip Field Emitter Arrays
- 발행일
- 200208
- 출처
- ETRI Journal, v.24 no.4, pp.290-298
- ISSN
- 1225-6463
- 출판사
- 한국전자통신연구원 (ETRI)
- 협약과제
- 01MM1300, 300cd/m제곱 고휘도 /저전력 FED 개발, 조경익
- 초록
- We present, for the first time, a prototype active-matrix field emission display (AMFED) in which an amorphous silicon thin-film transistor (a-Si TFT) and a molybdenumtip field emitter array (Mo-tip FEA) were monolithically integrated on a glass substrate for a novel active-matrix cathode (AMC) plate. The fabricated AMFED showed good display images with a low-voltage scan and data signals irrespective of a high voltage for field emissions. We introduced a light shield layer of metal into our AMC to reduce the photo leakage and back channel currents of the a-Si TFT. We designed the light shield to act as a focusing grid to focus emitted electron beams from the AMC onto the corresponding anode pixel. The thin film depositions in the a-Si TFTs were performed at a high temperature of above 360°C to guarantee the vacuum packaging of the AMC and anode plates. We also developed a novel wet etching process for n+-doped a-Si etching with high etch selectivity to intrinsic a-Si and used it in the fabrication of an inverted stagger TFT with a very thin active layer. The developed a-Si TFTs performed well enough to be used as control devices for AMCs. The gate bias of the a-Si TFTs well controlled the field emission currents of the AMC plates. The AMFED with these AMC plates showed lowvoltage matrix addressing, good stability and reliability of field emission, and good light emissions from the anode plate with phosphors.
- KSP 제안 키워드
- Active Layer, Amorphous silicon thin-film transistors(a-Si TFTs), Control device, Electron Beam, Etch selectivity, Glass substrate, High Temperature, High Voltage, Light Shield, Matrix field, Shield layer