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Journal Article Active-Matrix Field Emission Display with Amorphous Silicon Thin-Film Transistors and Mo-Tip Field Emitter Arrays
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Authors
Yoon-Ho Song, Chi-Sun Hwang, Young-Rae Cho, Bong-Chul Kim, Seong-Deok Ahn, Choong-Heui Chung, Do-Hyung Kim, Hyun-Seok Uhm, Jin-Ho Lee, Kyoung-Ik Cho
Issue Date
2002-08
Citation
ETRI Journal, v.24, no.4, pp.290-298
ISSN
1225-6463
Publisher
한국전자통신연구원 (ETRI)
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.4218/etrij.02.0102.0404
Abstract
We present, for the first time, a prototype active-matrix field emission display (AMFED) in which an amorphous silicon thin-film transistor (a-Si TFT) and a molybdenumtip field emitter array (Mo-tip FEA) were monolithically integrated on a glass substrate for a novel active-matrix cathode (AMC) plate. The fabricated AMFED showed good display images with a low-voltage scan and data signals irrespective of a high voltage for field emissions. We introduced a light shield layer of metal into our AMC to reduce the photo leakage and back channel currents of the a-Si TFT. We designed the light shield to act as a focusing grid to focus emitted electron beams from the AMC onto the corresponding anode pixel. The thin film depositions in the a-Si TFTs were performed at a high temperature of above 360°C to guarantee the vacuum packaging of the AMC and anode plates. We also developed a novel wet etching process for n+-doped a-Si etching with high etch selectivity to intrinsic a-Si and used it in the fabrication of an inverted stagger TFT with a very thin active layer. The developed a-Si TFTs performed well enough to be used as control devices for AMCs. The gate bias of the a-Si TFTs well controlled the field emission currents of the AMC plates. The AMFED with these AMC plates showed lowvoltage matrix addressing, good stability and reliability of field emission, and good light emissions from the anode plate with phosphors.
KSP Keywords
Active Layer, Amorphous silicon thin-film transistors(a-Si TFTs), Control device, Electron Beam, Etch selectivity, Glass substrate, High Temperature, High Voltage, Light Shield, Matrix field, Shield layer