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Journal Article
Breakdown Voltage Improvement of p-LDMOSFET with an Uneven Racetrack Source for PDP Driver IC Applications
- Authors
- Tae Moon Roh, Dae Woo Lee, Yil Suk Yang, Jin Gun Koo, Jong Dae Kim
- Issue Date
- 2002-08
- Citation
- ETRI Journal, v.24, no.4, pp.328-331
- ISSN
- 1225-6463
- Publisher
- 한국전자통신연구원 (ETRI)
- Language
- English
- Type
- Journal Article
- Abstract
- We investigated the electrical characteristics of p-channel double-diffused MOSFETs (p-LDMOSFETs) with an uneven racetrack source (URS) and a conventional racetrack source (CRS) for PDP driver IC applications. The breakdown voltage of the p-LDMOSFET with the URS in off-state was nearly the same as the p-LDMOSFET with the CRS. However, the breakdown voltage of the p-LDMOSFET with the URS in on-state was about 30% higher than that of the p-LDMOSFET with the CRS, while the saturated drain current of the p-LDMOSFET with the UPS was only about 4% lower than that of the p-LDMOSFET with the CRS.
- KSP Keywords
- Breakdown voltage(BDV), Drain current, Off-State, P-Channel, Voltage improvement, electrical characteristics