상세정보
학술지
Enhanced Bias Illumination Stability of Oxide Thin Film Transistor through Insertion of Ultrathin Positive Charge Barrier into Active Material
- 발행일
- 201107
- 출처
- Applied Physics Letters, v.99 no.2, pp.1-3
- ISSN
- 0003-6951
- 출판사
- American Institute of Physics (AIP)
- 초록
- A novel strategy to enhance the bias and illumination stress stability of oxide thin-film transistors (TFTs) is presented. The ultrathin positive charge barrier is employed to block the movement of photo-generated charges toward the interface between gate insulator and semiconductor under negative gate bias and illumination. This method can break through the limitation in stability enhancement caused by the inevitable oxygen vacancy and facilitates the fabrication of highly stable oxide TFTs at low process temperature. © 2011 American Institute of Physics.
- KSP 제안 키워드
- Active materials, Charge barrier, Gate insulator, Highly stable, Oxide TFTs, Oxygen vacancies, Positive charge, Process temperature, Thin-Film Transistor(TFT), gate bias, oxide thin-film transistors