ETRI-Knowledge Sharing Plaform

ENGLISH

성과물

논문 검색
구분 SCI
연도 ~ 키워드

상세정보

학술지 Enhanced Bias Illumination Stability of Oxide Thin Film Transistor through Insertion of Ultrathin Positive Charge Barrier into Active Material
Cited 35 time in scopus Download 2 time Share share facebook twitter linkedin kakaostory
저자
오힘찬, 박상희, 황치선, 양신혁, 유민기
발행일
201107
출처
Applied Physics Letters, v.99 no.2, pp.1-3
ISSN
0003-6951
출판사
American Institute of Physics (AIP)
DOI
https://dx.doi.org/10.1063/1.3610476
초록
A novel strategy to enhance the bias and illumination stress stability of oxide thin-film transistors (TFTs) is presented. The ultrathin positive charge barrier is employed to block the movement of photo-generated charges toward the interface between gate insulator and semiconductor under negative gate bias and illumination. This method can break through the limitation in stability enhancement caused by the inevitable oxygen vacancy and facilitates the fabrication of highly stable oxide TFTs at low process temperature. © 2011 American Institute of Physics.
KSP 제안 키워드
Active materials, Charge barrier, Gate insulator, Highly stable, Oxide TFTs, Oxygen vacancies, Positive charge, Process temperature, Thin-Film Transistor(TFT), gate bias, oxide thin-film transistors