상세정보
학술지
An Etch-Stop Technique Using Cr2O3 Thin Film and Its Application to Silica PLC Platform Fabrication
- 발행일
- 200210
- 출처
- ETRI Journal, v.24 no.5, pp.398-400
- ISSN
- 1225-6463
- 출판사
- 한국전자통신연구원 (ETRI)
- 협약과제
- 01MB2700, 하이브리드 집적 파장선택형 8채널 WDM 광원모듈, 김제하
- 초록
- Using Cr2O3 thin film, we developed a novel etch-stop technique for the protection of silicon surface morphology during deep ion coupled plasma etching of silica layers. With this technique we were able to etch a silica trench with a depth of over 20 μm without any damage to the exposed silicon terrace surface. This technique should be well applicable to fabricating silica planar lighwave circuit platforms for opto-electronic hybrid integration.
- KSP 제안 키워드
- Etch-stop, Hybrid Integration, Opto-electronic, Plasma Etching, Silicon surfaces, surface morphology, thin film(TF)