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Detail
Journal Article
An Etch-Stop Technique Using Cr2O3 Thin Film and Its Application to Silica PLC Platform Fabrication
- Authors
- Jang-Uk Shin, Dug-June Kim, Sang-Ho Park, Young-Tak Han, Hee-Kyung Sung, Je Ha Kim, Soo-Jin Park
- Issue Date
- 2002-10
- Citation
- ETRI Journal, v.24, no.5, pp.398-400
- ISSN
- 1225-6463
- Publisher
- 한국전자통신연구원 (ETRI)
- Language
- English
- Type
- Journal Article
- Abstract
- Using Cr2O3 thin film, we developed a novel etch-stop technique for the protection of silicon surface morphology during deep ion coupled plasma etching of silica layers. With this technique we were able to etch a silica trench with a depth of over 20 μm without any damage to the exposed silicon terrace surface. This technique should be well applicable to fabricating silica planar lighwave circuit platforms for opto-electronic hybrid integration.
- KSP Keywords
- Etch-stop, Hybrid Integration, Opto-electronic, Plasma Etching, Silicon surfaces, surface morphology, thin film(TF)