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Journal Article
Picosecond pulse generation for visible semiconductor laser operating at 650‐nm wavelength with the use of the gain‐switching technique
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- Authors
- Kwang H. Oh, N. Hwang, J. S. Koh, Dug Y. Kim
- Issue Date
- 2002-10
- Citation
- Microwave and Optical Technology Letters, v.35, no.1, pp.65-67
- ISSN
- 0895-2477
- Publisher
- Wiley
- Language
- English
- Type
- Journal Article
- Abstract
- Various characteristics of a gain-switched InGaAlP Fabry-Perot semiconductor laser operating with a center wavelength of 650 nm for short-distance ultra-fast optical transmission applications. The optimum gain switching conditions are studied in detail with this semiconductor laser.
- KSP Keywords
- Center wavelength, Fabry-perot, Picosecond pulse, Semiconductor lasers, Switching conditions, Switching technique, gain switching, gain-switched, optical transmission, pulse generation, short distance