BROWSE
Detail
Journal Article
1.5-μm and 10-Gbs-1 Etched Mesa Buried Heterostructure DFB-LD for Datacenter Networks
- Authors
- Oh Kee Kwon, Chul Wook Lee, Young Ahn Leem, Ki Soo Kim, Su Hwan Oh, Eun Soo Nam
- Issue Date
- 2015-08
- Citation
- Semiconductor Science and Technology, v.30, no.10, pp.1-7
- ISSN
- 0268-1242
- Publisher
- Institute of Physics (IOP)
- Language
- English
- Type
- Journal Article
- Abstract
- We report a 1.5 μm and 10 Gb s-1 etched mesa buried heterostructure {\\lambda}/4-shifted distributed feedback laser diode (DFB-LD) for the low-cost application of WDM-based datacenter networks. To reduce the threshold current and improve the modulation bandwidth in a conventional p-/n-/p-InP current blocking structure, a thin undoped-InP (u-InP) layer was inserted between the side walls of the active region and the p-InP layer (i.e., a u-/p-/n-/p-InP structure), and the region containing the active region and the current blocking structures was etched in a mesa form (i.e., an etched mesa). From this work, it was found that a 300 μm long anti-reflection (AR)-AR DFB-LD with a mesa width of 8 μm is reduced by about 25% while a side mode suppression ratio is >50 dB and a 3 dB bandwidth is >10 GHz at a current of 40 mA; in addition, it shows a clear eye-opening with a dynamic extinction ratio of >4.5 dB at 10 Gb s-1, and a power penalty of <1 dB after a 2 km transmission.
- KSP Keywords
- 10 Ghz, 3-dB bandwidth, Anti-Reflection, Data Center Networks, Distributed feedback laser diode, Distributed feedback lasers(DFBs), Extinction Ratio(ER), First Stokes(S1), Low-cost, Modulation bandwidth, Threshold current
This work is distributed under the term of Creative Commons License (CCL)
(CC BY)
(CC BY)
