상세정보
학술지
1.5-μm and 10-Gbs-1 Etched Mesa Buried Heterostructure DFB-LD for Datacenter Networks
- 발행일
- 201508
- 출처
- Semiconductor Science and Technology, v.30 no.10, pp.1-7
- ISSN
- 0268-1242
- 출판사
- Institute of Physics (IOP)
- 협약과제
- 14MB1200, 스마트 데이터센터용 차세대 광-전 모듈 기술, 남은수
- 초록
- We report a 1.5 μm and 10 Gb s-1 etched mesa buried heterostructure {\\lambda}/4-shifted distributed feedback laser diode (DFB-LD) for the low-cost application of WDM-based datacenter networks. To reduce the threshold current and improve the modulation bandwidth in a conventional p-/n-/p-InP current blocking structure, a thin undoped-InP (u-InP) layer was inserted between the side walls of the active region and the p-InP layer (i.e., a u-/p-/n-/p-InP structure), and the region containing the active region and the current blocking structures was etched in a mesa form (i.e., an etched mesa). From this work, it was found that a 300 μm long anti-reflection (AR)-AR DFB-LD with a mesa width of 8 μm is reduced by about 25% while a side mode suppression ratio is >50 dB and a 3 dB bandwidth is >10 GHz at a current of 40 mA; in addition, it shows a clear eye-opening with a dynamic extinction ratio of >4.5 dB at 10 Gb s-1, and a power penalty of <1 dB after a 2 km transmission.
- KSP 제안 키워드
- 10 Ghz, 3-dB bandwidth, Anti-Reflection, Data Center Networks, Distributed feedback laser diode, Distributed feedback lasers(DFBs), First Stokes(S1), Laser diode(LD), Low-cost, Modulation bandwidth, Threshold current