상세정보
학술지
Water-Related Abnormal Instability of Transparent Oxide/Organic Hybrid Thin Film Transistors
- 발행일
- 201103
- 출처
- Applied Physics Letters, v.98 no.10, pp.1-3
- ISSN
- 0003-6951
- 출판사
- American Institute of Physics (AIP)
- 초록
- We have fabricated fully patterned transparent oxide/organic hybrid transistors on glass substrates that contain In-Ga-Zn-O as the active layer and a poly(4-vinyl phenol-comethyl methacrylate) copolymer as the dielectric layer. These devices exhibit a saturation mobility of 6.04cm2 /V s, a threshold voltage value of 3.53 V, a subthreshold slope of 360 mV/decade, and an on-off ratio of 1.0× 109 at a maximum processing temperature of 200 °C. We found that the bias stability characteristics of the hybrid transistors are dependent on the ambient conditions, but can also be dramatically improved by applying a hydrophobic organic passivation layer to the gate insulator. © 2011 American Institute of Physics.
- KSP 제안 키워드
- 3 V, 4-vinyl phenol(Poly), Active Layer, Gate insulator, Glass substrate, In-Ga-Zn-O(IGZO), Organic passivation, Processing temperature, Saturation mobility, Stability characteristics, Subthreshold slope(SS)