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Journal Article Water-Related Abnormal Instability of Transparent Oxide/Organic Hybrid Thin Film Transistors
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Authors
Shinhyuk Yang, Chi-Sun Hwang, Jeong-Ik Lee, Sung-Min Yoon, Min-Ki Ryu, Kyoung-Ik Cho, Sang-Hee Ko Park,  Se-Hyun Kim, Chan-Eon Park, Jin Jang
Issue Date
2011-03
Citation
Applied Physics Letters, v.98, no.10, pp.1-3
ISSN
0003-6951
Publisher
American Institute of Physics (AIP)
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1063/1.3551536
Project Code
10MB3700, Development of core technology for high performance AMOLED on plastic, Byoung Gon Yu
Abstract
We have fabricated fully patterned transparent oxide/organic hybrid transistors on glass substrates that contain In-Ga-Zn-O as the active layer and a poly(4-vinyl phenol-comethyl methacrylate) copolymer as the dielectric layer. These devices exhibit a saturation mobility of 6.04cm2 /V s, a threshold voltage value of 3.53 V, a subthreshold slope of 360 mV/decade, and an on-off ratio of 1.0× 109 at a maximum processing temperature of 200 °C. We found that the bias stability characteristics of the hybrid transistors are dependent on the ambient conditions, but can also be dramatically improved by applying a hydrophobic organic passivation layer to the gate insulator. © 2011 American Institute of Physics.
KSP Keywords
3 V, 4-vinyl phenol(Poly), Active Layer, Gate insulator, Glass substrate, In-Ga-Zn-O(IGZO), Organic passivation, Processing temperature, Saturation mobility, Stability characteristics, Subthreshold slope(SS)
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CC BY NC ND