상세정보
학술지
Characteristics of Ti-Doped ITO Films Grown by DC Magnetron Sputtering
- 발행일
- 201201
- 출처
- Ceramics International, v.38 no.SUPPL. 1, pp.S617-S621
- ISSN
- 0272-8842
- 출판사
- Elsevier
- 협약과제
- 10MB6800, 디스플레이용 산화물 반도체 조성 및 고밀도 산화물 반도체 타켓 개발, 정우석
- 초록
- We have investigated the effects of Ti doping on the structural, optical, and electrical properties of indium tin oxide (ITO) thin films prepared by direct-current (DC) sputtering at room temperature. It is observed that the Ti doping changes the microstructure of the ITO films from amorphous to polycrystalline improving the electrical properties. The optimized ITO:Ti thin film after annealing shows a carrier concentration of 6.24 × 10 20 cm -3, a mobility of 34 cm 2/V s, and a resistivity of 2.3 × 10 -4 廓 cm. The ITO:Ti film also shows a better thermal stability up to 450°C. © 2011 Elsevier Ltd and Techna Group S.r.l.
- KSP 제안 키워드
- Carrier concentration, Direct current(DC), ITO film, Room-temperature, Thermal stability(TGA), Ti doping, Ti film, Ti thin film, Ti-doped ITO, dc Magnetron sputtering, electrical properties(I-V curve)