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Characteristics of Ti-Doped ITO Films Grown by DC Magnetron Sputtering
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- Authors
- Sung Mook Chung, Jae Heon Shin, Woo-Seok Cheong, Chi-Sun Hwang, Kyoung Ik Cho, Young Jin Kim
- Issue Date
- 2012-01
- Citation
- Ceramics International, v.38, no.SUPPL. 1, pp.S617-S621
- ISSN
- 0272-8842
- Publisher
- Elsevier
- Language
- English
- Type
- Journal Article
- Project Code
- 10MB6800, 디스플레이용 산화물 반도체 조성 및 고밀도 산화물 반도체 타켓 개발, Cheong Woo-Seok
- Abstract
- We have investigated the effects of Ti doping on the structural, optical, and electrical properties of indium tin oxide (ITO) thin films prepared by direct-current (DC) sputtering at room temperature. It is observed that the Ti doping changes the microstructure of the ITO films from amorphous to polycrystalline improving the electrical properties. The optimized ITO:Ti thin film after annealing shows a carrier concentration of 6.24 × 10 20 cm -3, a mobility of 34 cm 2/V s, and a resistivity of 2.3 × 10 -4 廓 cm. The ITO:Ti film also shows a better thermal stability up to 450°C. © 2011 Elsevier Ltd and Techna Group S.r.l.
- KSP Keywords
- Carrier concentration, Direct current(DC), ITO film, Room-temperature, Thermal stability(TGA), Ti doping, Ti film, Ti thin film, Ti-doped ITO, dc Magnetron sputtering, electrical properties(I-V curve)