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Journal Article Characteristics of Ti-Doped ITO Films Grown by DC Magnetron Sputtering
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Authors
Sung Mook Chung, Jae Heon Shin, Woo-Seok Cheong, Chi-Sun Hwang, Kyoung Ik Cho, Young Jin Kim
Issue Date
2012-01
Citation
Ceramics International, v.38, no.SUPPL. 1, pp.S617-S621
ISSN
0272-8842
Publisher
Elsevier
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1016/j.ceramint.2011.05.110
Project Code
10MB6800, 디스플레이용 산화물 반도체 조성 및 고밀도 산화물 반도체 타켓 개발, Cheong Woo-Seok
Abstract
We have investigated the effects of Ti doping on the structural, optical, and electrical properties of indium tin oxide (ITO) thin films prepared by direct-current (DC) sputtering at room temperature. It is observed that the Ti doping changes the microstructure of the ITO films from amorphous to polycrystalline improving the electrical properties. The optimized ITO:Ti thin film after annealing shows a carrier concentration of 6.24 × 10 20 cm -3, a mobility of 34 cm 2/V s, and a resistivity of 2.3 × 10 -4 廓 cm. The ITO:Ti film also shows a better thermal stability up to 450°C. © 2011 Elsevier Ltd and Techna Group S.r.l.
KSP Keywords
Carrier concentration, Direct current(DC), ITO film, Room-temperature, Thermal stability(TGA), Ti doping, Ti film, Ti thin film, Ti-doped ITO, dc Magnetron sputtering, electrical properties(I-V curve)