상세정보
학술지
Fabrication and Electrical Properties of an AlGaN/GaN HEMT on SiC with a Taper-Shaped Backside Via Hole
- 발행일
- 201508
- 출처
- Journal of the Korean Physical Society, v.67 no.4, pp.718-722
- ISSN
- 0374-4884
- 출판사
- 한국물리학회
- 협약과제
- 15MB1800, 고효율 GaN 기반 기지국/단말기용 핵심부품 및 모듈 개발, 임종원
- 초록
- SiC substrates and GaN/AlGaN epitaxial layers were etched by using an inductively-coupled plasma (ICP) in order to electrically connect the backside metal to the source electrode pads on the front-side of an AlGaN/GaN high-electron-mobility transistor (HEMT) device. The shape of an etched via hole was a tapered cylinder with a larger diameter at the entrance. The surfaces on the bottom and a wall of the via hole were very smooth in comparison with the results on the most recently published papers. Through optimization of the etching conditions, the etch-stops on the GaN epi-layer and on the source pad were successfully completed. The electrical properties of the device with the backside via holes were not critically different from those of the device without the backside via holes. In this paper, the fabrication process and the electrical properties of AlGaN/GaN HEMTs on SiC substrates with taper-shaped backside via holes are reported for the first time.
- KSP 제안 키워드
- AlGaN/GaN HEMTs, Epitaxial layer, Etching conditions, Front-side, High electron mobility transistor(HEMT), Inductively-coupled plasma(ICP), Via-hole, electrical properties(I-V curve), fabrication process