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Journal Article Fabrication and Electrical Properties of an AlGaN/GaN HEMT on SiC with a Taper-Shaped Backside Via Hole
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Authors
Byoung-Gue Min,  Seong-Il Kim, Jong-Min Lee, Hyung Sup Yoon, Haecheon Kim, Ho-Kyun Ahn, Kyu-Jun Cho, Dong-Min Kang, Sang-Heung Lee, Chul-Won Ju, Jong-Won Lim, Byoung-Chul Jun, Youn-Kook Jung
Issue Date
2015-08
Citation
Journal of the Korean Physical Society, v.67, no.4, pp.718-722
ISSN
0374-4884
Publisher
한국물리학회
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.3938/jkps.67.718
Abstract
SiC substrates and GaN/AlGaN epitaxial layers were etched by using an inductively-coupled plasma (ICP) in order to electrically connect the backside metal to the source electrode pads on the front-side of an AlGaN/GaN high-electron-mobility transistor (HEMT) device. The shape of an etched via hole was a tapered cylinder with a larger diameter at the entrance. The surfaces on the bottom and a wall of the via hole were very smooth in comparison with the results on the most recently published papers. Through optimization of the etching conditions, the etch-stops on the GaN epi-layer and on the source pad were successfully completed. The electrical properties of the device with the backside via holes were not critically different from those of the device without the backside via holes. In this paper, the fabrication process and the electrical properties of AlGaN/GaN HEMTs on SiC substrates with taper-shaped backside via holes are reported for the first time.
KSP Keywords
AlGaN/GaN HEMTs, Epitaxial layer, Etching conditions, Front side, High electron mobility transistor(HEMT), Inductively-coupled plasma(ICP), Via-hole, electrical properties(I-V curve), fabrication process