상세정보
학술지
High Transconductance Modulation-doped SiGe pMOSFETs by RPCVD
- 발행일
- 200211
- 출처
- Electronics Letters, v.38 no.23, pp.1479-1480
- ISSN
- 0013-5194
- 출판사
- IET
- 협약과제
- 02MB1400, 실리콘 미래 신소자 원천기술 개발, 이성재
- 초록
- High transconductance modulation-doped SiGe p metal-oxide-semiconductor field effect transistor (MOSFET) was fabricated by reduced pressure chemical vapor deposition (RPCVD). Compared to a Si-control pMOSFET,it showed 30% enhanced Gm up to 102 mS/mm for 0.3 gate length. This process is suitable for the mass production of high-density and high-speed complementary metal oxide semiconductor (CMOS) integrated circuits.
- KSP 제안 키워드
- Complementary metal-oxide-semiconductor(CMOS), Field-effect transistors(FETs), High Speed, High-density, Integrated circuit, Metal-oxide(MOX), Metal-oxide-semiconductor field-effect transistor(MOSFET), Modulation-doped(MD), Reduced pressure chemical vapor deposition, SiGe pMOSFETs, gate length