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High Transconductance Modulation-doped SiGe pMOSFETs by RPCVD
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- Authors
- Young-Joo Song, Jung-Wook Lim, Jin-Young Kang, Kyu-Hwan Shim
- Issue Date
- 2002-11
- Citation
- Electronics Letters, v.38, no.23, pp.1479-1480
- ISSN
- 0013-5194
- Publisher
- IET
- Language
- English
- Type
- Journal Article
- Abstract
- High transconductance modulation-doped SiGe p metal-oxide-semiconductor field effect transistor (MOSFET) was fabricated by reduced pressure chemical vapor deposition (RPCVD). Compared to a Si-control pMOSFET,it showed 30% enhanced Gm up to 102 mS/mm for 0.3 gate length. This process is suitable for the mass production of high-density and high-speed complementary metal oxide semiconductor (CMOS) integrated circuits.
- KSP Keywords
- Complementary metal-oxide-semiconductor(CMOS), Field-effect transistors(FETs), High Speed, High-density, Integrated circuit, Metal-oxide(MOX), Metal-oxide-semiconductor field-effect transistor(MOSFET), Modulation-doped(MD), Reduced pressure chemical vapor deposition, SiGe pMOSFETs, gate length