ETRI-Knowledge Sharing Plaform

KOREAN
논문 검색
Type SCI
Year ~ Keyword

Detail

Journal Article High Transconductance Modulation-doped SiGe pMOSFETs by RPCVD
Cited 3 time in scopus Share share facebook twitter linkedin kakaostory
Authors
Young-Joo Song, Jung-Wook Lim, Jin-Young Kang, Kyu-Hwan Shim
Issue Date
2002-11
Citation
Electronics Letters, v.38, no.23, pp.1479-1480
ISSN
0013-5194
Publisher
IET
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1049/el:20020970
Abstract
High transconductance modulation-doped SiGe p metal-oxide-semiconductor field effect transistor (MOSFET) was fabricated by reduced pressure chemical vapor deposition (RPCVD). Compared to a Si-control pMOSFET,it showed 30% enhanced Gm up to 102 mS/mm for 0.3 gate length. This process is suitable for the mass production of high-density and high-speed complementary metal oxide semiconductor (CMOS) integrated circuits.