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Conference Paper
700 V / 20 A Double AlGaN/GaN Lateral Schottky Barrier Diodes with Recessed Anode Structure on Silicon Substrate
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- Authors
- Jeho Na, Hyung-Seok Lee, Chi-Hoon Jun, Dong Yun Jung, Hyun Soo Lee, Woojin Chang, Sang Choon Ko, Eun Soo Nam
- Issue Date
- 2015-08
- Citation
- International Conference on Nitride Semiconductors (ICNS) 2015, pp.1-2
- Language
- English
- Type
- Conference Paper
- Abstract
- AlGaN/GaN Schottky barrier diodes (SBDs) are suitable for high power switching devices because of their fast switching speed, low on-resistance, and large breakdown voltage; therefore, various AlGaN/GaN SBDs have been investigated as great candidates for rectifiers or freewheeling devices in DC-DC converters and inverters [1]. However, most published papers have presented their SBDs' characteristics whose device sizes are relatively small, and so it has been difficult to judge whether they can be really applied into high-power applications or how far the AlGaN/GaN SBDs technology is achieved to be commercialized. In this work, large-sized double AlGaN/GaN lateraltyped SBDs with recessed anode structure on silicon substrate are reported. A high current (21 A at 2 V), a low on-resistance RON (0.055 Ω), a low turn-on voltage (0.75 V), and a relatively good reverse breakdown voltage (over 700 V) have been simultaneously attained in the double SBDs.
- KSP Keywords
- 700 V, Anode structure, Breakdown Voltage, DC-DC Converters, Fast switching speed, High Current, High power applications, Low on-resistance, Power switching, Reverse breakdown, Silicon substrate