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Conference Paper
Effects on Breakdown Voltage Characteristics of Various Field Plates in GaN FETs
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- Authors
- Woojin Chang, Jeong-Jin Kim, Seong-Bum Bae, Young-Rak Park, Jae-Kyoung Mun, Sang- Choon Ko
- Issue Date
- 2015-08
- Citation
- International Conference on Nitride Semiconductors (ICNS) 2015, pp.1-2
- Language
- English
- Type
- Conference Paper
- Abstract
- AlGaN/GaN FETs have successfully showed promising potential in power electronic applications. The emerging GaN power semiconductor devices are considered a promising candidate to achieve high frequency, high speed, and high efficiency due to the advantage of material properties. [1][2] These GaN devices are able to operate harsh environment. Therefore, they make a power system less cooling needs, smaller passives, and system size reduction. A field plate is a metal electrode which spreads some high electric field at the gate edge of transistor to make the device a higher blocking voltage operation at pinch-off state. In this paper, we present effects on the breakdown voltages by different field plates in GaN FETs, which further improve the breakdown voltage characteristics of GaN FETs using a proper FP structure.
- KSP Keywords
- Breakdown Voltage, Cooling needs, Field plate, GaN FET, GaN device, High Speed, High frequency(HF), Pinch-off, Power electronic applications, Power system, Size reduction