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Journal Article Characterization of ultrafast devices using near-field optical heterodyning
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Authors
M. E. Ali, K. Geary, H. R. Fetterman, S. K. Han, K. Y. Kang
Issue Date
2002-10
Citation
IEEE Microwave and Wireless Components Letters, v.12, no.10, pp.369-371
ISSN
1531-1309
Publisher
IEEE
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1109/LMWC.2002.804553
Abstract
We demonstrate a novel technique for highly localized injection of millimeter waves in ultrafast devices that combines optical heterodyning and near-field optics. The technique relies on evanescent coupling of two interfering lasers to a sub-micron area of a device by means of a near-field fiber optic probe. Scanning measurements show the dc and ac photoresponses of two ultrafast device structures, namely low-temperature GaAs photo-conductive switches and InP-based high electron mobility transistors. The response characteristics were rich in structures that revealed important details of device dynamics.
KSP Keywords
Device structure, Evanescent coupling, Fiber optic probe, Field fiber, High electron mobility transistor(HEMT), InP-based, Low temperature(LT), Low-temperature GaAs, Millimeter waves(MMW), Novel technique, Optical heterodyning