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Characterization of ultrafast devices using near-field optical heterodyning
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- Authors
- M. E. Ali, K. Geary, H. R. Fetterman, S. K. Han, K. Y. Kang
- Issue Date
- 2002-10
- Citation
- IEEE Microwave and Wireless Components Letters, v.12, no.10, pp.369-371
- ISSN
- 1531-1309
- Publisher
- IEEE
- Language
- English
- Type
- Journal Article
- Abstract
- We demonstrate a novel technique for highly localized injection of millimeter waves in ultrafast devices that combines optical heterodyning and near-field optics. The technique relies on evanescent coupling of two interfering lasers to a sub-micron area of a device by means of a near-field fiber optic probe. Scanning measurements show the dc and ac photoresponses of two ultrafast device structures, namely low-temperature GaAs photo-conductive switches and InP-based high electron mobility transistors. The response characteristics were rich in structures that revealed important details of device dynamics.
- KSP Keywords
- Device structure, Evanescent coupling, Fiber optic probe, Field fiber, High electron mobility transistor(HEMT), InP-based, Low temperature(LT), Low-temperature GaAs, Millimeter waves(MMW), Novel technique, Optical heterodyning