상세정보
학술지
Characterization of ultrafast devices using near-field optical heterodyning
- 저자
- M. E. Ali, K. Geary, H. R. Fetterman, S. K. Han, 강광용
- 발행일
- 200210
- 출처
- IEEE Microwave and Wireless Components Letters, v.12 no.10, pp.369-371
- ISSN
- 1531-1309
- 출판사
- IEEE
- 협약과제
- 02ZB1100, 국제경쟁력 강화를 위한 정보통신 핵심원천기술 연구, 이번
- 초록
- We demonstrate a novel technique for highly localized injection of millimeter waves in ultrafast devices that combines optical heterodyning and near-field optics. The technique relies on evanescent coupling of two interfering lasers to a sub-micron area of a device by means of a near-field fiber optic probe. Scanning measurements show the dc and ac photoresponses of two ultrafast device structures, namely low-temperature GaAs photo-conductive switches and InP-based high electron mobility transistors. The response characteristics were rich in structures that revealed important details of device dynamics.
- KSP 제안 키워드
- Device structure, Evanescent coupling, Fiber optic probe, Field fiber, High electron mobility transistor(HEMT), InP-based, Low temperature(LT), Low-temperature GaAs, Millimeter waves(MMW), Novel technique, Optical heterodyning