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Conference Paper
Strong Visible Light Emission from Silicon Nanocrystals Embedded into a Silicon Carbide Film
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- Authors
- Chul Huh, Tae-Youb Kim, Chang-Geun Ahn, Bong-Kyu Kim
- Issue Date
- 2015-08
- Citation
- International Conference on Quantum, Nano and Micro Technologies (ICQNM) 2015, pp.5-6
- Language
- English
- Type
- Conference Paper
- Abstract
- We report the strong visible light emission from silicon (Si) nanocrystals (NCs) embedded in a Si carbide (SiC) film. Compared to Si NC light-emitting diode (LED) by employing the Si nitride (SiNx) film as a surrounding matrix, the turn-on voltage of the Si NC LED with the SiC film was significantly decreased by 4 V. This was attributed to a smaller barrier height for injecting the electrons into the Si NCs due to a smaller band gap of SiC film than a SiNx film. The electroluminescence spectra increase with the forward voltage, indicating that the electrons are efficiently injected into the Si NCs in the SiC film. The power efficiency of the Si NC LED with the SiC film was 1.56 times larger than that of the Si NC LED with the SiNx film. The Si NCs in a SiC film show unique advantages, and are a promising candidate for application in optical devices.
- KSP Keywords
- Barrier height(BH), Electroluminescence spectra, Forward voltage, Light-emitting diode (led), Power Efficiency, SiC film, Silicon carbide film, Silicon nanocrystals(Si NCs), Turn-on voltage, Visible light emission, band gap