상세정보
학술지
Improved Thin Film Transistor Performance of Solution-Processed-Zinc-Oxide Nanorods with Spin-on-Glass Capping Layer
- 발행일
- 201209
- 출처
- Current Applied Physics, v.12 no.SUPPL. 1, pp.e18-e23
- ISSN
- 1567-1739
- 출판사
- Elsevier
- 협약과제
- 11MB1600, 모바일 플렉시블 입출력 플랫폼, 조경익
- 초록
- Due to the vulnerability of various organic and oxide materials to the atmosphere, a protective layer is often used to improve device performance and stability. In this study, we use a spin-on-glass (SOG) layer to encapsulate a solution-processed-zinc-oxide (ZnO) film. ZnO loses oxygen very easily to the atmosphere and even loses Zn at relatively low temperatures. An SOG capping layer prevents the loss of oxygen without degrading its crystalline properties. We demonstrate the properties of a bottom-gate transistor with a capping layer; it shows improved electrical properties with a mobility of 0.5 cm 2/V.s. and stability. Physical characterization reveals that the defect density with a capping layer is much lower than it is without it. A capping layer can also prevent the loss of oxygen at the annealing temperature of 350 °C. © 2012 Elsevier Inc. All rights reserved.
- KSP 제안 키워드
- Annealing temperature, Bottom gate, Capping layer, Crystalline properties, Low temperature(LT), Oxide material, Physical Characterization, Protective layer, Solution-processed, Spin-on-glass, Thin-Film Transistor(TFT)