BROWSE
Detail
Journal Article
Flexible Organic Thin-Film Transistors Fabricated on Polydimethylsiloxane Elastomer Substrates
Cited 4 time in 
Share 
Share
- Issue Date
- 2015-10
- Citation
- Journal of Nanoscience and Nanotechnology, v.15, no.10, pp.7513-7517
- ISSN
- 1533-4880
- Publisher
- American Scientific Publishers (ASP)
- Language
- English
- Type
- Journal Article
- Abstract
- In this study, we fabricated flexible organic thin-film transistors (OTFTs) on a polydimethysiloxane (PDMS) elastomer substrate using blends of poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] and poly(methyl methacrylate) (PMMA) and amorphous conjugated polymer poly(9,9-dioctylfuorene-co-bithiophene) (F8T2) as the gate dielectric and semiconducting layer, respectively. All the processes were performed at elastomer-compatible temperatures of below 100 °C. We confirmed the basic properties of the P(VDF-TrFE):PMMA blend film on the PDMS substrate, and the characteristics of the fabricated flexible OTFTs were also evaluated. A subthreshold voltage swing of 2.5 V/decade, an Ion/Ioff ratio greater than 105, field-effect mobility of 1.2 × 10-3 cm2 V-1 s-1, and a 10-11 A gate leakage current were obtained. These characteristics did not degrade at a bending radius of 1 cm. For the OTFTs, the endurable maximum strain without degradation in the field-effect mobility of the PDMS elastomers was approximately 2%.
- KSP Keywords
- Basic properties, Bending radius, Conjugated polymer(PFO-co-MEH-PPV), First Stokes(S1), Organic thin-film transistors (otfts), Thin-Film Transistor(TFT), VDF-TrFE(PZT/P), Vinylidene fluoride(VDF), blend film, elastomer substrate, field-effect mobility