BROWSE
Detail
Journal Article
Fabrication of Stretchable Organic–Inorganic Hybrid Thin-Film Transistors on Polyimide Stiff-Island Structures
Cited 9 time in 
Share 
Share
- Issue Date
- 2015-10
- Citation
- Journal of Nanoscience and Nanotechnology, v.15, no.10, pp.7526-7530
- ISSN
- 1533-4880
- Publisher
- American Scientific Publishers (ASP)
- Language
- English
- Type
- Journal Article
- Abstract
- In this study, stretchable organic-inorganic hybrid thin-film transistors (TFTs) are fabricated on a polyimide (PI) stiff-island/elastomer substrate using blends of poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] and poly(methyl methacrylate) (PMMA) and oxide semiconductor In-Ga-Zn-O as the gate dielectric and semiconducting layer, respectively. Carrier mobility, Ion/Ioffratio, and subthreshold swing (SS) values of 6.1 cm2 V-1 s-1, 107, and 0.2 V/decade, respectively, were achieved. For the hybrid TFTs, the endurable maximum strain without degradation of electrical properties was approximately 49%. These results correspond to those obtained in the first study on fabrication of stretchable hybrid-type TFTs on elastomer substrate using an organic gate insulator and oxide semiconducting active channel structure, thus indicating the feasibility of a promising device for stretchable electronic systems.
- KSP Keywords
- Active channel, Carrier mobility, Channel structure, Electrical properties, Electronic system, First Stokes(S1), Hybrid thin film, Hybrid-type, In-Ga-Zn-O, Thin-Film Transistor(TFT), VDF-TrFE(PZT/P)