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학술지 Texturing of Ga-Doped ZnO Transparent Electrode for a-Si:H Thin Film Solar Cells
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저자
이재민, 윤선진, 김준관, 임정욱
발행일
201111
출처
Electrochemical and Solid-State Letters, v.14 no.11, pp.B124-B126
ISSN
1099-0062
출판사
Electrochemical Society (ECS)
DOI
https://dx.doi.org/10.1149/2.018111esl
협약과제
10MB6100, 광캡쳐 구조 반사방지막 및 조성기울기를 갖는 Si/SiGe 박막 태양전지 기술 개발, 윤선진
초록
Texturing of Ga-doped ZnO (GZO) was performed for Si thin film solar cell applications using the acetic acid-diluted nitric acid solution. The nitric acid-based texturing solution resulted in rougher surface morphology than the HCl solution that has been generally used as a texturing solution of ZnO-based transparent conductive oxides. The highest solar cell conversion efficiency was achieved using 400 nm-etched GZO film. The short circuit current density and conversion efficiency of the single junction a-Si:H solar cell were improved considerably by as much as 28 and 42%, respectively, compared to those of reference cells. © 2011 The Electrochemical Society.
KSP 제안 키워드
Acetic acid(AA), As 2, Conversion efficiency(C.E.), Diluted nitric acid, GZO film, Ga-doped ZnO, HCl Solution, Nitric acid solution, Reference cell, Short circuit current density, Si thin film