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Journal Article
Texturing of Ga-Doped ZnO Transparent Electrode for a-Si:H Thin Film Solar Cells
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- Authors
- Jae-Min Lee, Sun Jin Yun, Jun Kwan Kim, Jung Wook Lim
- Issue Date
- 2011-11
- Citation
- Electrochemical and Solid-State Letters, v.14, no.11, pp.B124-B126
- ISSN
- 1099-0062
- Publisher
- Electrochemical Society (ECS)
- Language
- English
- Type
- Journal Article
- Abstract
- Texturing of Ga-doped ZnO (GZO) was performed for Si thin film solar cell applications using the acetic acid-diluted nitric acid solution. The nitric acid-based texturing solution resulted in rougher surface morphology than the HCl solution that has been generally used as a texturing solution of ZnO-based transparent conductive oxides. The highest solar cell conversion efficiency was achieved using 400 nm-etched GZO film. The short circuit current density and conversion efficiency of the single junction a-Si:H solar cell were improved considerably by as much as 28 and 42%, respectively, compared to those of reference cells. © 2011 The Electrochemical Society.
- KSP Keywords
- Acetic acid(AA), As 2, Conversion efficiency(C.E.), Diluted nitric acid, GZO film, Ga-doped ZnO(GZO), HCl solution, Nitric acid solution, Short circuit current density, Si thin film, Single junction