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Journal Article Organic Thin-Film Transistors with Short Channel Length Fabricated by Reverse Offset Printing
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Authors
Minseok Kim, In-Kyu You, Hyun Han, Soon-Won Jung, Tae-Youb Kim, Byeong-Kwon Ju, Jae Bon Koo
Issue Date
2011-05
Citation
Electrochemical and Solid-State Letters, v.14, no.8, pp.H333-H336
ISSN
1099-0062
Publisher
Electrochemical Society (ECS)
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1149/1.3591435
Abstract
We report on the fabrication of organic thin-film transistors (OTFTs) with a reverse-offset-printed Ag metal source/drain (S/D) electrode pattern. The printed electrodes had a channel length of less than 5 μm and resistivity of 3 × 10-6 ?? cm. The OTFTs were fabricated from regioregular poly(3-hexylthiophene) as the semiconductor and poly(methyl methacrylate) as the gate insulator. The transfer and output characteristics of a top-gate OTFT with a channel length of 5 μm were evaluated. Here we discuss in detail the technological challenges encountered with reverse offset printing and the failure modes. © 2011 The Electrochemical Society. [DOI: 10.1149/1.3591435] All rights reserved.
KSP Keywords
3-hexylthiophene(SEM poly), Channel Length, Electrode pattern, Failure mode, Gate insulator, Organic thin-film transistors (otfts), Printed electrodes, Regioregular poly(3-hexylthiophene)(RR-P3HT), Short channel, Thin-Film Transistor(TFT), metal source/drain(S/D)