상세정보
학술지
Effect of Inductively Coupled Plasma on the Structural and Electrical Properties of Ti-Doped ITO Films Formed by IPVD
- 발행일
- 201510
- 출처
- Journal of Nanoscience and Nanotechnology, v.15 no.10, pp.8099-8102
- ISSN
- 1533-4880
- 출판사
- American Scientific Publishers (ASP)
- 협약과제
- 14PB5400, 하이브리드 전극을 활용한 차세대 멀티터치 IC 및 모듈 개발, 정우석
- 초록
- In this study, we investigated Ti-doped ITO films formed through ionized physical vapor deposition (IPVD) using inductively coupled plasma (ICP). Ti-doped ITO thin films showed an enhanced mobility with ICP power; owing to the improved crystallinity, and the sheet resistance of the Ti-doped ITO (30 nm) largely decreased from 295.1 to 134.5 ohm/sq, even during at room temperature. Therefore, IPVD technology offers a useful tool for transparent electrodes with a large area window-unified touch-screen panel.
- KSP 제안 키워드
- Enhanced mobility, ICP power, ITO film, ITO thin film, Improved crystallinity, Inductively-coupled plasma(ICP), Ionized physical vapor deposition(IPVD), Room-temperature, Structural and electrical properties, Ti-doped ITO, electrical properties(I-V curve)