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Journal Article
Effect of Inductively Coupled Plasma on the Structural and Electrical Properties of Ti-Doped ITO Films Formed by IPVD
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- Authors
- Chan-Hwa Hong, Jae-Heon Shin, Nae-Man Park, Kyung-Hyun Kim, Bo-Sul Kim, Chang-Woo Song, Ji-Woong Yang, Woo-Hyung Seo, Byeong-Kwon Ju, Woo-Seok Cheong
- Issue Date
- 2015-10
- Citation
- Journal of Nanoscience and Nanotechnology, v.15, no.10, pp.8099-8102
- ISSN
- 1533-4880
- Publisher
- American Scientific Publishers (ASP)
- Language
- English
- Type
- Journal Article
- Abstract
- In this study, we investigated Ti-doped ITO films formed through ionized physical vapor deposition (IPVD) using inductively coupled plasma (ICP). Ti-doped ITO thin films showed an enhanced mobility with ICP power; owing to the improved crystallinity, and the sheet resistance of the Ti-doped ITO (30 nm) largely decreased from 295.1 to 134.5 ohm/sq, even during at room temperature. Therefore, IPVD technology offers a useful tool for transparent electrodes with a large area window-unified touch-screen panel.
- KSP Keywords
- Enhanced mobility, ICP power, ITO film, ITO thin film, Improved crystallinity, Ionized physical vapor deposition, Room temperature, Structural and electrical properties, Ti-doped ITO, inductively coupled plasma(ICP), large area