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Characteristics of a Field Plate Connected to T-shaped Gate in AlGaN/GaN HEMTs
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- Authors
- Kyu Jun Cho, Ho Kyun Ahn, Sung Il Kim, Dong Min Kang, Jong Min Lee, Byoung Gue Min, Sang Heung Lee, Dong Yung Kim, Hyung Sup Yoon, Hae Cheon Kim, Kyung Ho Lee, Chul Won Ju, Jong Won Lim, Yong Hwan Kwon, Eun Soo Nam
- Issue Date
- 2015-08
- Citation
- Journal of the Korean Physical Society, v.67, no.4, pp.682-686
- ISSN
- 0374-4884
- Publisher
- 한국물리학회
- Language
- English
- Type
- Journal Article
- Abstract
- An AlGaN/GaN high electron mobility transistor (HEMT) with a T-shaped gate employing a gate-foot-connected field plate is presented. Similar to other devices with gate connected field plates the device described in this paper is a variation of the ??-shaped gate with the ?쐆ead?? of the Tshaped gate attached at the top. The proposed device has a higher breakdown voltage and a lower leakage current due to the attached field plate while maintaining the advantages of the T-shaped gate structure, which are a low gate resistance and a low noise level. In addition, the field plate deposition step during the fabrication process involves a partial covering of the ?쐄oot?? of the gate which showed a possibility for a gate length reduction.
- KSP Keywords
- AlGaN/GaN HEMTs, Breakdown Voltage, Fabrication process, Field plate, Gate resistance, High-electron mobility transistor(HEMT), Leakage Current, Low noise, T-shaped gate, gate length, noise level