상세정보
학술지
Characteristics of a Field Plate Connected to T-shaped Gate in AlGaN/GaN HEMTs
- 발행일
- 201508
- 출처
- Journal of the Korean Physical Society, v.67 no.4, pp.682-686
- ISSN
- 0374-4884
- 출판사
- 한국물리학회
- 협약과제
- 14DR1400, Ka대역 GaN MMIC 기반 SSPA 개발 , 노윤섭
- 초록
- An AlGaN/GaN high electron mobility transistor (HEMT) with a T-shaped gate employing a gate-foot-connected field plate is presented. Similar to other devices with gate connected field plates the device described in this paper is a variation of the ??-shaped gate with the ?쐆ead?? of the Tshaped gate attached at the top. The proposed device has a higher breakdown voltage and a lower leakage current due to the attached field plate while maintaining the advantages of the T-shaped gate structure, which are a low gate resistance and a low noise level. In addition, the field plate deposition step during the fabrication process involves a partial covering of the ?쐄oot?? of the gate which showed a possibility for a gate length reduction.
- KSP 제안 키워드
- AlGaN/GaN HEMTs, Breakdown voltage(BDV), Field Plate, Gate resistance, High electron mobility transistor(HEMT), Leakage current, Low noise, T-shaped gate, fabrication process, gate length, noise level